US Patent Application 18151360. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME simplified abstract

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Kanyu Cao of Hefei (CN)

Tzung-Han Lee of Hefei (CN)

Chih-Cheng Liu of Hefei (CN)

Huaiwei Yang of Hefei (CN)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151360 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

Simplified Explanation

The patent application describes a semiconductor structure consisting of a storage chip, a control chip, and a capacitor structure.

• The storage chip has an array area, while the control chip has a peripheral area.
• The storage chip and the control chip are connected together in a face-to-face bonding manner.
• The capacitor structure is located on the surface of the storage chip, away from the bonding surface.
• The capacitor structure includes capacitors that are electrically connected to corresponding transistors in the array area.

Original Abstract Submitted

A semiconductor structure includes a storage chip, a control chip, and a capacitor structure. The storage chip includes an array area. The control chip includes a peripheral area. The control chip and the storage chip are connected in a face-to-face bonding manner. The capacitor structure is located on a surface, away from a bonding surface, of the storage chip. The capacitor structure includes capacitors electrically connected to corresponding transistors in the array area.