US Patent Application 18057305. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract

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THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Yunsun Jang of Suwon-si (KR)]]

[[Category:Jungtae Sung of Suwon-si (KR)]]

[[Category:Moorym Choi of Suwon-si (KR)]]

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18057305 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation

The patent application describes three-dimensional semiconductor memory devices and electronic systems.

  • The memory device includes a first substrate with a cell array region and a contact region.
  • A peripheral circuit structure is present on the first substrate.
  • A cell array structure is stacked on the peripheral circuit structure, consisting of interlayer dielectric layers and gate electrodes.
  • A dielectric layer is placed on top of the stack structure.
  • A second substrate is placed on the stack structure.
  • A mold structure made of dielectric material penetrates the stack structure.
  • The mold structure contains a first through structure and a second through structure, which are spaced apart from each other.


Original Abstract Submitted

Disclosed are three-dimensional semiconductor memory devices and electronic systems. The three-dimensional semiconductor memory device includes a first substrate that includes a cell array region and a contact region, a peripheral circuit structure on the first substrate, a cell array structure on the peripheral circuit structure wherein the cell array structure includes interlayer dielectric layers and gate electrodes that are alternately stacked, a dielectric layer on the stack structure, and a second substrate on the stack structure, a mold structure that penetrates the stack structure and includes a dielectric material, and a first through structure and a second through structure that penetrate the mold structure and are spaced apart from each other.

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