US Patent Application 17929842. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE simplified abstract

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METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Yi Tang of Hefei City (CN)

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17929842 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE

Simplified Explanation

The present disclosure is about a method of manufacturing a semiconductor structure and the structure itself.

  • The method involves providing a base and forming active layers and sacrificial layers on the base.
  • The active layers are arranged in groups with a specific distance between them.
  • Isolation layers are then formed, which penetrate through all the active and sacrificial layers, dividing the active layers into multiple structures.
  • In the word line region, some of the isolation and sacrificial layers are removed.


Original Abstract Submitted

Embodiments of the present disclosure relate to the field of semiconductors, and provide a method of manufacturing a semiconductor structure and a semiconductor structure. The manufacturing method includes: providing a base, and forming active layers and sacrificial layers on the base, wherein two adjacent ones of the active layers constitute an active group, there is a first distance between the active layers in the active group, there is a second distance between adjacent ones of active groups, and the first distance is greater than the second distance; forming isolation layers, wherein each isolation layer penetrates through all the active layers and all the sacrificial layers, and the isolation layers divide each of the active layers into a plurality of active structures; removing a part of the isolation layers in the word line region and a part of the sacrificial layers located in the word line region.

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