US Patent Application 17929747. ANTI-FUSE STRUCTURE, ANTI-FUSE ARRAY AND MEMORY simplified abstract

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ANTI-FUSE STRUCTURE, ANTI-FUSE ARRAY AND MEMORY

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Chuangming Hou of Hefei City (CN)

ANTI-FUSE STRUCTURE, ANTI-FUSE ARRAY AND MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17929747 titled 'ANTI-FUSE STRUCTURE, ANTI-FUSE ARRAY AND MEMORY

Simplified Explanation

The patent application describes an anti-fuse structure with two units, each consisting of a selection transistor and multiple anti-fuse cells.

  • The first unit includes a first selection transistor, a first anti-fuse cell, and a second anti-fuse cell.
  • The second unit includes a second selection transistor, a third anti-fuse cell, and a fourth anti-fuse cell.
  • Both units share an active region with independent extension parts on opposite sides.
  • The first and second extension parts are on one side, while the third and fourth extension parts are on the other side.
  • The first anti-fuse cell is located at the first extension part, the second anti-fuse cell at the second extension part, the third anti-fuse cell at the third extension part, and the fourth anti-fuse cell at the fourth extension part.


Original Abstract Submitted

An anti-fuse structure includes: a first unit including a first selection transistor, a first anti-fuse (AF) cell and a second AF cell; and a second unit including a second selection transistor, a third AF cell and a fourth AF cell. The first unit and second unit share an active region, which is provided with a first extension part and a second extension part which are independent of each other at a first side, and provided with a third extension part and a fourth extension part which are independent of each other at a second side, the first side being opposite to the second side. The first AF cell is arranged at the first extension part, the second AF cell is arranged at the second extension part, the third AF cell is arranged at the third extension part, and the fourth AF cell is arranged at the fourth extension part.