US Patent Application 17899684. SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SAME simplified abstract

SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SAME

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Min Li of Hefei (CN)

SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17899684 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SAME

Simplified Explanation

The patent application describes a semiconductor structure and a method for preparing it.

• The method involves providing a substrate with active areas arranged in an array and an isolation structure separating the active areas.
• Buried word line structures are formed on one side of the substrate, close to the first surface, and embedded into the active areas.
• Bit line structures are formed on the first surface of the substrate and electrically connected to the active areas.
• Capacitor structures are formed on the second surface of the substrate and connected to the active areas in a one-to-one correspondence.

Original Abstract Submitted

A semiconductor structure and a method for preparing the same are provided. The method for preparing a semiconductor includes: providing a substrate including Active Areas (AAs) arranged in an array and an isolation structure separating the AAs, the substrate being provided with a first surface and a second surface opposite to each other; forming buried word line structures located on a side, close to the first surface, of the substrate and embedded into the AAs; forming bit line structures located on the first surface of the substrate and electrically connected to the AAs; and forming capacitor structures located on the second surface of the substrate and connected to the AAs in one-to-one correspondence.