US Patent Application 17878046. SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF simplified abstract

SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Xiaojie Li of Hefei (CN)

SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17878046 titled 'SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor structure and a method for forming it.

• The semiconductor structure includes a stacked layer on a substrate, with multiple semiconductor layers spaced along a first direction.
• The stacked layer has a transistor region, a capacitor region, and a bit line region.
• A capacitor is formed in the capacitor region, extending along a second direction.
• A word line is formed in the transistor region, extending along the first direction.
• A bit line is formed in the bit line region, extending along the third direction.

Original Abstract Submitted

Embodiments relates to a semiconductor structure and a formation method thereof. The method for forming a semiconductor structure includes: forming a stacked layer on a top surface of a substrate, where the stacked layer includes a plurality of semiconductor layers spaced along a first direction, the stacked layer includes a transistor region, and a capacitor region and a bit line region; forming a capacitor extending along the second direction in the capacitor region; forming a word line in the transistor region, the word line extending along the first direction; and forming a bit line in the bit line region, the bit line extending along the third direction.