US Patent Application 17868774. METHOD FOR SENSE MARGIN DETECTION FOR SENSE AMPLIFIER AND ELECTRONIC DEVICE simplified abstract
Contents
METHOD FOR SENSE MARGIN DETECTION FOR SENSE AMPLIFIER AND ELECTRONIC DEVICE
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
METHOD FOR SENSE MARGIN DETECTION FOR SENSE AMPLIFIER AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17868774 titled 'METHOD FOR SENSE MARGIN DETECTION FOR SENSE AMPLIFIER AND ELECTRONIC DEVICE
Simplified Explanation
- The patent application describes a method for detecting sense margin for a sense amplifier and an electronic device. - The method involves writing data to memory cells connected to a bit line and word lines, and performing a reverse write operation on the memory cells. - Write operations are then performed on memory cells connected to a second bit line. - The second memory cell is read, and the preset row precharge time is determined as the margin value of row precharge time for the first sense amplifier when the first data is not correctly read.
Original Abstract Submitted
Embodiments provide a method for sense margin detection for a sense amplifier and an electronic device. The method includes: writing first data and second data respectively to a first memory cell and a second memory cell connected to a first bit line, the first memory cell and the second memory cell being respectively connected to a first word line and a second word line adjacent to each other, and the first bit line being connected to a first sense amplifier; performing a reverse write operation on the first memory cell and the second memory cell; performing write operations on memory cells connected to the second bit line; and reading the second memory cell, and determining the preset row precharge time to be a margin value of row precharge time of the first sense amplifier when the first data is not correctly read.
