US Patent Application 17826776. MEMORY DEVICE INCLUDING CONTACT STRUCTURES HAVING MULTI-LAYER DIELECTRIC LINER simplified abstract

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MEMORY DEVICE INCLUDING CONTACT STRUCTURES HAVING MULTI-LAYER DIELECTRIC LINER

Organization Name

Micron Technology, Inc.

Inventor(s)

Shuangqiang Luo of Boise ID (US)

MEMORY DEVICE INCLUDING CONTACT STRUCTURES HAVING MULTI-LAYER DIELECTRIC LINER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17826776 titled 'MEMORY DEVICE INCLUDING CONTACT STRUCTURES HAVING MULTI-LAYER DIELECTRIC LINER

Simplified Explanation

The patent application describes apparatuses and methods for forming memory cells and control gates.

  • The apparatus includes tiers with memory cells and control gates, and conductive contacts that have different lengths between tiers.
  • There is a contact structure adjacent to one of the conductive contacts.
  • The contact structure has a conductive core portion and a dielectric liner portion.
  • The dielectric liner portion consists of three different dielectric materials layered together.
  • The purpose of the contact structure is to provide electrical connectivity while maintaining separation from the control gates.


Original Abstract Submitted

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes tiers located one over another, the tiers including respective memory cells and control gates for the memory cells; conductive contacts contacting the control gates, the conductive contacts having different lengths extending in a direction from one tier to another tier among the tiers; and a contact structure adjacent one of the conductive contacts. The contact structure includes a conductive core portion extending through the tiers and separated from the control gates, and a dielectric liner portion adjacent the conductive core portion. The dielectric liner portion includes a first dielectric material, a second dielectric material adjacent the first dielectric material, and a third dielectric material adjacent the second dielectric material.

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