US Patent Application 17816156. TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY simplified abstract

From WikiPatents
Jump to navigation Jump to search

TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

YOUMING Liu of Hefei City (CN)

Deyuan Xiao of Hefei City (CN)

TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17816156 titled 'TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY

Simplified Explanation

The patent application describes a transistor and its manufacturing method, as well as a memory, in the field of semiconductors.

  • The transistor includes a channel with an accommodation space inside it.
  • The gate of the transistor has two ends, with one end located inside the accommodation space and the other end located outside.
  • A dielectric layer is positioned between the gate and the channel to insulate and isolate them.
  • The transistor also includes a source at one end of the channel and a drain at the other end, both made of semiconductor material.
  • The source, drain, and channel are arranged at intervals along the length direction of the channel.


Original Abstract Submitted

The present disclosure provides a transistor and a manufacturing method thereof, and a memory, relates to the technical field of semiconductors. The transistor includes: a channel, wherein an accommodation space is formed therein; a gate, provided with a first end and a second end that are opposite, wherein the first end of the gate is located inside the accommodation space, and the second end of the gate is located outside the accommodation space; a dielectric layer, located between the gate and a channel, insulating and isolating the gate and the channel; a source, provided at one end of the channel; and a drain, provided at the other end of the channel, wherein the drain and the source are arranged at intervals along a length direction of the channel, and the source, the drain, and the channel are each made of a semiconductor material.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_17816156._TRANSISTOR_AND_MANUFACTURING_METHOD_THEREOF,_AND_MEMORY_simplified_abstract&oldid=10880"