US Patent Application 17804270. MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract

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MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES

Organization Name

Micron Technology, Inc.

Inventor(s)

Fatma Arzum Simsek-ege of Boise ID (US)

MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17804270 titled 'MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES

Simplified Explanation

The patent application describes a microelectronic device that consists of two vertically stacked microelectronic device structures.

  • The first microelectronic device structure has a memory array region and a control logic device region.
  • The second microelectronic device structure also has a memory array region and a control logic device region.
  • A third control logic device region is positioned above the second microelectronic device structure.
  • The first control logic device region includes sense amplifier devices for the first memory array region.
  • The second control logic device region includes additional sense amplifier devices and sub word line drivers for the second memory array region.
  • The third control logic device region includes additional sub word line drivers for the second memory array region.
  • The patent application also covers related microelectronic devices, electronic systems, and methods.


Original Abstract Submitted

A microelectronic device comprises a first microelectronic device structure and a second microelectronic device structure vertically neighboring the first microelectronic device structure. The first microelectronic device structure comprises a first memory array region and a first control logic device region and the second microelectronic device structure comprises a second memory array region and a first control logic device region. A third control logic device region vertically overlies the second microelectronic device structure. The first control logic device region includes sense amplifier devices for the first memory array region. The second control logic device region includes additional sense amplifier devices and sub word line drivers for the second memory array region. The third control logic device region includes additional sub word line drivers for the second memory array region. Related microelectronic devices, electronic systems, and methods are also described.

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