Kioxia corporation (20240099033). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Toshiaki Sato of Yokohama (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099033 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes multiple sense amplifier regions, a first wiring layer with multiple bit lines connected to semiconductor layers, and a second wiring layer with first wirings connecting the sense amplifier regions to the bit lines. The device also features a semiconductor substrate with distinct regions arranged in a specific direction.
- The patent application describes a semiconductor memory device with multiple sense amplifier regions and wiring layers for efficient data storage and retrieval.
- The device includes a semiconductor substrate with distinct regions arranged in a specific direction, allowing for optimized placement of wiring layers and sense amplifier regions.
Potential Applications
This technology can be applied in various electronic devices requiring high-speed and efficient memory storage, such as smartphones, tablets, and computers.
Problems Solved
This technology solves the problem of slow data access and retrieval in semiconductor memory devices by optimizing the placement of sense amplifier regions and wiring layers.
Benefits
The benefits of this technology include faster data processing speeds, improved memory efficiency, and enhanced overall performance of electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance memory chips for consumer electronics, data centers, and other computing devices.
Possible Prior Art
One possible prior art for this technology could be the development of semiconductor memory devices with optimized wiring layouts and sense amplifier configurations to improve data access speeds and memory efficiency.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison between this technology and existing memory devices in terms of speed and efficiency.
What are the potential challenges in implementing this technology on a larger scale for commercial production?
This article does not address the potential challenges in implementing this technology on a larger scale for commercial production.
Original Abstract Submitted
a semiconductor memory device includes a plurality of sense amplifier regions, a first wiring layer including a plurality of bit lines electrically connected to a plurality of semiconductor layers, and a second wiring layer including a plurality of first wirings electrically connecting the respective plurality of sense amplifier regions to the plurality of bit lines. the semiconductor substrate includes a first region and a second region arranged in a second direction. the (n1) (n1 is an integer of 2 or more) first wirings arranged in the third direction are disposed at a position where the first region overlaps with the sense amplifier region viewed in the first direction. the (n2) (n2 is an integer of 2 or more different from n1) first wirings arranged in the third direction are disposed at a position where the second region overlaps with the other sense amplifier region viewed in the first direction.
