Kioxia corporation (20240099031). SEMICONDUCTOR MEMORY DEVICE simplified abstract

SEMICONDUCTOR MEMORY DEVICE

Organization Name

kioxia corporation

Inventor(s)

Toshifumi Hashimoto of Fujisawa (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240099031 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The memory plane region in the patent application includes a first structure and a second structure with conductive layers, as well as a first memory region, a second memory region, and a third memory region. The first structure has first via contact electrodes in the first region, while the second structure has second via contact electrodes in the second region. The first via contact electrodes are connected to transistors where they overlap with the first region and the second region, while the second via contact electrodes are connected to transistors where they overlap with the first region and the second region.

• The memory plane region includes a first structure and a second structure with conductive layers.
• The first structure has first via contact electrodes in the first region, while the second structure has second via contact electrodes in the second region.
• The first via contact electrodes are connected to transistors where they overlap with the first region and the second region.
• The second via contact electrodes are connected to transistors where they overlap with the first region and the second region.

Potential Applications

This technology could be applied in the development of advanced memory storage devices, such as high-speed RAM modules or solid-state drives.

Problems Solved

This technology solves the problem of efficiently connecting memory regions and transistors within a memory plane region, improving overall performance and reliability.

Benefits

The benefits of this technology include increased data transfer speeds, reduced power consumption, and enhanced memory storage capabilities.

Potential Commercial Applications

The potential commercial applications of this technology could include the production of faster and more efficient memory modules for consumer electronics, data centers, and other computing devices.

Possible Prior Art

One possible prior art for this technology could be the development of multi-layer memory structures with integrated transistors for improved data processing capabilities.

How does this technology compare to existing memory plane designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing memory plane designs, so it is unclear how this technology stacks up against current solutions in the market.

What are the potential limitations or challenges in implementing this technology on a large scale for commercial production?

The article does not address any potential limitations or challenges in scaling up this technology for mass production, leaving room for further exploration and analysis in this area.

Original Abstract Submitted

a memory plane region includes a first structure and a second structure having conductive layers, and includes a first memory region to a third memory region, a first region between the first memory region and the second memory region, and a second region between the second memory region and the third memory region. the first structure comprises first via contact electrodes in the first region. the second structure comprises second via contact electrodes in the second region. the first via contact electrodes are electrically connected to transistors provided at positions where the first structure and the first region overlap, and where the second structure and the first region overlap. the second via contact electrodes are electrically connected to transistors provided at positions where the first structure and the second region overlap, and where the second structure and the second region overlap.