Kioxia corporation (20240098999). SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Junichi Hashimoto of Yokkaichi Mie (JP)
Toshiyuki Sasaki of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098999 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the patent application includes a stacked body with alternating layers of conductive and insulating materials, a pillar that penetrates through the stacked body, and varying thicknesses of insulating layers in different regions of the stacked body.
- The semiconductor memory device includes a lower layer and a stacked body above it.
- The stacked body consists of first conductive layers and first insulating layers alternately stacked.
- A pillar penetrates through the stacked body to reach the lower layer.
- At least one first insulating layer in a first region of the stacked body is thicker than the insulating layers in a second region above it.
- The pillar has different bowing shapes at different heights within the stacked body.
Potential Applications
This technology could be applied in:
- Semiconductor memory devices
- Solid-state drives
- Embedded systems
Problems Solved
This technology helps address:
- Improved data storage capacity
- Enhanced data transfer speeds
- Increased durability of memory devices
Benefits
The benefits of this technology include:
- Higher performance in memory devices
- More efficient data storage
- Longer lifespan of semiconductor memory devices
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data centers
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of stacked structures in semiconductor devices to increase storage capacity and performance.
Unanswered Questions
How does the varying thickness of insulating layers affect the overall performance of the semiconductor memory device?
The varying thickness of insulating layers could impact the speed and efficiency of data transfer within the device.
What materials are used for the conductive and insulating layers in the stacked body?
The specific materials used for the conductive and insulating layers could influence the durability and reliability of the semiconductor memory device.
Original Abstract Submitted
according to one embodiment, a semiconductor memory device includes a lower layer, a stacked body above the lower layer with first conductive layers and first insulating layers alternately stacked. a pillar penetrates through the stacked body to reach the lower layer. at least one first insulating layer other than the lowest among the first insulating layers in a first region of the stacked body is thicker than first insulating layers in a second region above the first region. the pillar has a first bowing shape at the height of the at least one thicker first insulating layer and a second bowing shape at a height in the second region.
