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Category:C30B25/20
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Pages in category "C30B25/20"
The following 4 pages are in this category, out of 4 total.
1
- 18367753. SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER simplified abstract (RESONAC CORPORATION)
- 18457440. GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
- 18478203. METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT simplified abstract (DENSO CORPORATION)
- 18478203. METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
