18478203. METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT simplified abstract (DENSO CORPORATION)

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT

Organization Name

DENSO CORPORATION

Inventor(s)

Kiyoshi Betsuyaku of Tokyo (JP)

Norihiro Hoshino of Tokyo (JP)

Isaho Kamata of Tokyo (JP)

Hidekazu Tsuchida of Tokyo (JP)

Akiyoshi Horiai of Nisshin-shi (JP)

Takeshi Okamoto of Nisshin-shi (JP)

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18478203 titled 'METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT

Simplified Explanation

The method described in the patent application involves manufacturing a silicon carbide single crystal ingot with a high crystal growth rate and an increased ratio of conversion from basal plane dislocations to threading edge dislocations. Here are some key points to explain the innovation:

• Seed substrate composed of silicon carbide with an off-angle in a [1-100] direction with respect to a {0001} plane
• Growth of a silicon carbide single crystal layer on the seed substrate using an HTCVD method
• Conversion of basal plane dislocations in the seed substrate to threading edge dislocations during crystal growth

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1. 1. 1. Potential Applications of this Technology

- Semiconductor industry for high-power devices - Aerospace industry for high-temperature applications

1. 1. 1. Problems Solved by this Technology

- Improving crystal growth rate in silicon carbide single crystal ingots - Increasing the ratio of conversion from basal plane dislocations to threading edge dislocations

1. 1. 1. Benefits of this Technology

- Enhanced performance of semiconductor devices - Increased efficiency in high-temperature applications

1. 1. 1. Potential Commercial Applications of this Technology
         1. Silicon Carbide Single Crystal Manufacturing for High-Performance Devices

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1. 1. 1. Possible Prior Art

There are existing methods for growing silicon carbide single crystals, but the specific technique described in this patent application for converting basal plane dislocations to threading edge dislocations may be novel.

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1. 1. 1. Unanswered Questions
         1. How does this method compare to other techniques for reducing dislocations in silicon carbide single crystals?

The patent application does not provide a direct comparison with other methods for reducing dislocations in silicon carbide single crystals.

1. 1. 1. 1. What are the specific parameters and conditions required for optimal conversion of dislocations during crystal growth?

The patent application does not detail the specific parameters and conditions required for optimal conversion of dislocations during crystal growth.

Original Abstract Submitted

Provided are a method for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot which ensure a high crystal growth rate and increase the ratio of conversion from basal plane dislocations to threading edge dislocations. The method prepares a seed substrate composed of silicon carbide having an off-angle in a [1-100] direction with respect to a {0001} plane; and grows a silicon carbide single crystal layer on the seed substrate by an HTCVD method, thereby converting basal plane dislocations contained in the seed substrate to threading edge dislocations during crystal growth.