18478203. METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT

Organization Name

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor(s)

Kiyoshi Betsuyaku of Tokyo (JP)

Norihiro Hoshino of Tokyo (JP)

Isaho Kamata of Tokyo (JP)

Hidekazu Tsuchida of Tokyo (JP)

Akiyoshi Horiai of Nisshin-shi (JP)

Takeshi Okamoto of Nisshin-shi (JP)

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18478203 titled 'METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT

Simplified Explanation

The method described in the patent application involves manufacturing a silicon carbide single crystal ingot with a high crystal growth rate and increased conversion ratio from basal plane dislocations to threading edge dislocations. Here are some key points to explain the innovation:

• Seed substrate made of silicon carbide with an off-angle in a [1-100] direction with respect to a {0001} plane is prepared.
• Silicon carbide single crystal layer is grown on the seed substrate using an HTCVD method.
• Basal plane dislocations in the seed substrate are converted to threading edge dislocations during crystal growth.

Potential Applications

The technology can be applied in the production of high-quality silicon carbide single crystal ingots for use in various industries such as semiconductor manufacturing, power electronics, and aerospace.

Problems Solved

This method addresses the challenge of achieving a high crystal growth rate while increasing the conversion ratio of basal plane dislocations to threading edge dislocations in silicon carbide single crystal ingots.

Benefits

• Improved crystal quality
• Enhanced performance of electronic devices
• Increased efficiency in manufacturing processes

Potential Commercial Applications

"High Crystal Growth Rate Method for Silicon Carbide Single Crystal Ingot Manufacturing" can find applications in industries requiring high-performance silicon carbide materials, such as power electronics, telecommunications, and automotive.

Possible Prior Art

One possible prior art in this field is the use of various growth techniques to reduce dislocations in silicon carbide single crystals, such as epitaxial growth methods and defect engineering strategies.

How does this method compare to other techniques for reducing dislocations in silicon carbide single crystals?

This article does not provide a direct comparison with other techniques or technologies used to reduce dislocations in silicon carbide single crystals. It would be helpful to understand the specific advantages and limitations of this method compared to existing approaches.

What are the specific parameters and conditions required for successful implementation of this method?

The article does not delve into the detailed parameters or conditions necessary for the successful growth of silicon carbide single crystal ingots using this method. Understanding the specific requirements would be crucial for potential adopters looking to replicate the process.

Original Abstract Submitted

Provided are a method for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot which ensure a high crystal growth rate and increase the ratio of conversion from basal plane dislocations to threading edge dislocations. The method prepares a seed substrate composed of silicon carbide having an off-angle in a [1-100] direction with respect to a {0001} plane; and grows a silicon carbide single crystal layer on the seed substrate by an HTCVD method, thereby converting basal plane dislocations contained in the seed substrate to threading edge dislocations during crystal growth.