Apple inc. (20240105545). Thermally Enhanced Chip-on-Wafer or Wafer-on-Wafer Bonding simplified abstract
Contents
Thermally Enhanced Chip-on-Wafer or Wafer-on-Wafer Bonding
Organization Name
Inventor(s)
Jiongxin Lu of Cupertino CA (US)
Kunzhong Hu of Cupertino CA (US)
Sanjay Dabral of Cupertino CA (US)
Thermally Enhanced Chip-on-Wafer or Wafer-on-Wafer Bonding - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105545 titled 'Thermally Enhanced Chip-on-Wafer or Wafer-on-Wafer Bonding
Simplified Explanation
The abstract describes semiconductor packages with integrated heat spreaders and methods of fabrication. In one embodiment, the package includes a first package level, a second package level with one or more chiplets, and a heat spreader bonded to the second package level with a metallic layer, potentially including intermetallic compounds formed by transient liquid phase bonding.
- Explanation of the patent/innovation:
- Semiconductor packages with integrated heat spreaders - Two package levels with chiplets in the second level - Heat spreader bonded with a metallic layer - Metallic layer may contain intermetallic compounds formed by transient liquid phase bonding
Potential applications of this technology: - High-performance computing - Data centers - Automotive electronics
Problems solved by this technology: - Improved thermal management in semiconductor packages - Enhanced performance and reliability of electronic devices
Benefits of this technology: - Increased efficiency of heat dissipation - Better overall performance of semiconductor devices
Potential commercial applications of this technology: - Consumer electronics - Telecommunications equipment - Industrial automation systems
Possible prior art: - Previous semiconductor packaging designs with separate heat spreaders - Traditional bonding methods for attaching heat spreaders to packages
Unanswered questions: 1. How does the use of intermetallic compounds in the metallic layer impact the overall thermal conductivity of the package? 2. Are there any specific design considerations or limitations when integrating heat spreaders into semiconductor packages with multiple levels?
Original Abstract Submitted
semiconductor packages including an integrated heat spreader and methods of fabrication are described. in an embodiment, a semiconductor package includes a first package level, a second package level including one or more second-level chiplets, and a heat spreader bonded to the second package level with a metallic layer, which may include one or more intermetallic compounds formed by transient liquid phase bonding.
