20240047634. VERTICAL SOLID-STATE TRANSDUCERS HAVING BACKSIDE TERMINALS AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)

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VERTICAL SOLID-STATE TRANSDUCERS HAVING BACKSIDE TERMINALS AND ASSOCIATED SYSTEMS AND METHODS

Organization Name

Micron Technology, Inc.

Inventor(s)

Vladimir Odnoblyudov of Eagle ID (US)

Martin F. Schubert of Mountain View CA (US)

VERTICAL SOLID-STATE TRANSDUCERS HAVING BACKSIDE TERMINALS AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240047634 titled 'VERTICAL SOLID-STATE TRANSDUCERS HAVING BACKSIDE TERMINALS AND ASSOCIATED SYSTEMS AND METHODS

Simplified Explanation

The abstract describes a patent application for vertical solid-state transducers (SSTs) with backside contacts. The SST includes a transducer structure with a first semiconductor material on one side, a second semiconductor material on the opposite side, and an active region between them. The SST also has first and second contacts electrically connected to the first and second semiconductor materials, respectively. A portion of the first contact is covered by a dielectric material, while another portion remains exposed. A conductive carrier substrate is placed on the dielectric material, and an isolating via extends through the substrate to the dielectric material, surrounding the exposed portion of the first contact to define first and second terminals accessible from the first side.

  • The patent application describes a design for vertical solid-state transducers (SSTs) with backside contacts.
  • The SST includes a transducer structure with two different semiconductor materials and an active region between them.
  • The transducer structure is electrically connected to first and second contacts.
  • A portion of the first contact is covered by a dielectric material, while another portion remains exposed.
  • A conductive carrier substrate is placed on the dielectric material.
  • An isolating via extends through the substrate to the dielectric material, surrounding the exposed portion of the first contact.
  • This configuration allows for first and second terminals that can be accessed from the first side.

Potential Applications

  • This technology can be used in various electronic devices that require solid-state transducers, such as sensors, actuators, and transmitters.
  • It can be applied in medical devices, automotive systems, consumer electronics, and industrial equipment.

Problems Solved

  • The design solves the problem of providing electrical connections to the semiconductor materials in a vertical SST.
  • It addresses the challenge of isolating the exposed portion of the contact to prevent short circuits.
  • The use of a conductive carrier substrate improves the stability and reliability of the electrical connections.

Benefits

  • The vertical SST design allows for compact and efficient integration of transducer structures.
  • The backside contacts provide a simplified and more accessible electrical connection.
  • The use of a dielectric material and isolating via ensures proper isolation and prevents electrical interference.
  • The technology offers improved performance, reliability, and manufacturability of solid-state transducers.


Original Abstract Submitted

vertical solid-state transducers (“ssts”) having backside contacts are disclosed herein. an sst in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the sst, a second semiconductor material at a second side of the sst opposite the first side, and an active region between the first and second semiconductor materials. the sst can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. a portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. a conductive carrier substrate can be disposed on the dielectric material. an isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

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