18533410. Integrated Assemblies and Semiconductor Memory Devices simplified abstract (Micron Technology, Inc.)
Contents
- 1 Integrated Assemblies and Semiconductor Memory Devices
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Integrated Assemblies and Semiconductor Memory Devices - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Integrated Assemblies and Semiconductor Memory Devices
Organization Name
Inventor(s)
Sangmin Hwang of Boise ID (US)
Christopher G. Wieduwilt of Boise ID (US)
Integrated Assemblies and Semiconductor Memory Devices - A simplified explanation of the abstract
This abstract first appeared for US patent application 18533410 titled 'Integrated Assemblies and Semiconductor Memory Devices
Simplified Explanation
The integrated assembly described in the abstract includes a CMOS region with fins extending across it on a first pitch. A circuit arrangement associated with the CMOS region includes segments of the fins and has a first dimension along a first direction. A second region proximate to the CMOS region has conductive structures extending along a second direction different from the first direction, with some of them electrically coupled with the circuit arrangement. The conductive structures are on a second pitch different from the first pitch, and the second dimension is substantially the same as the first dimension.
- Integrated assembly with CMOS region and fins on a first pitch
- Circuit arrangement with segments of fins and first dimension along a first direction
- Second region with conductive structures on a second pitch and extending along a different direction
- Some conductive structures electrically coupled with the circuit arrangement
- Second dimension across some of the conductive structures along the first direction is substantially the same as the first dimension
Potential Applications
This technology could be applied in the development of advanced integrated circuits, particularly in the field of semiconductor manufacturing.
Problems Solved
This innovation solves the challenge of optimizing space utilization and electrical connectivity in integrated circuit designs.
Benefits
The benefits of this technology include improved performance, increased efficiency, and enhanced functionality of integrated circuits.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of high-performance electronic devices for various industries.
Possible Prior Art
Prior art related to this technology may include patents or publications discussing the integration of different components in semiconductor devices to enhance their performance.
Unanswered Questions
== How does this technology compare to existing methods of integrating circuit components? This article does not provide a direct comparison with existing methods of integrating circuit components.
== What specific industries or applications could benefit the most from this technology? The article does not specify which industries or applications could benefit the most from this technology.
Original Abstract Submitted
Some embodiments include an integrated assembly having a CMOS region. Fins extend across the CMOS region and are on a first pitch. A circuit arrangement is associated with the CMOS region and includes segments of one or more of the fins. The circuit arrangement has a first dimension along a first direction. A second region is proximate the CMOS region. Conductive structures are associated with the second region. The conductive structures extend along a second direction different than the first direction. Some of the conductive structures are electrically coupled with the circuit arrangement. The conductive structures are on a second pitch different from the first pitch. A second dimension is a distance across said some of the conductive structures along the first direction, and the second dimension is substantially the same as the first dimension.
