18513742. ENHANCED WRITE PERFORMANCE UTILIZING PROGRAM INTERLEAVE simplified abstract (Micron Technology, Inc.)

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ENHANCED WRITE PERFORMANCE UTILIZING PROGRAM INTERLEAVE

Organization Name

Micron Technology, Inc.

Inventor(s)

Daniel J. Hubbard of Boise ID (US)

Roy Leonard of San Jose CA (US)

ENHANCED WRITE PERFORMANCE UTILIZING PROGRAM INTERLEAVE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18513742 titled 'ENHANCED WRITE PERFORMANCE UTILIZING PROGRAM INTERLEAVE

Simplified Explanation

The abstract describes a system that writes data to multiple level cell (XLC) storage using page level interleave.

  • The system includes a memory and a processing device.
  • The processing device initiates a write operation to write data to a first XLC block and a second XLC block.
  • The data is divided into two portions and written to different pages of the XLC blocks using page level interleave.
  • The number of pages written to each block is determined by an interleave mix, which includes an interleave ratio between different XLC write modes.

Potential Applications

This technology could be applied in:

  • Solid-state drives
  • Data storage systems
  • High-performance computing

Problems Solved

This technology solves problems related to:

  • Efficient data storage in XLC cells
  • Optimizing write operations in memory systems

Benefits

The benefits of this technology include:

  • Improved data writing efficiency
  • Enhanced performance in memory systems
  • Increased storage capacity in XLC cells

Potential Commercial Applications

Optimizing Data Storage in XLC Cells for Improved Performance

Unanswered Questions

How does this technology impact data retrieval speed?

This article does not address how the page level interleave technique affects data retrieval speed in memory systems.

What are the potential limitations of this technology in real-world applications?

The article does not discuss any potential limitations or challenges that may arise when implementing this technology in practical settings.


Original Abstract Submitted

A system includes a memory and a processing device, operatively coupled to the memory, to perform operations including initiating a write operation to write data to a first multiple level cell (XLC) storage including a first XLC block and a second XLC storage including a second XLC block, and causing a first portion of the data to be written to a first number of pages of the first XLC block and a second portion of the data to be written to a second number of pages of the second XLC block using page level interleave. The first number of pages and the second number of pages are defined by an interleave mix including an interleave ratio between a first XLC write mode and a second XLC write mode.