18507721. FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
Contents
- 1 FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS
Organization Name
Inventor(s)
Kyle K. Kirby of Eagle ID (US)
Kunal R. Parekh of Boise ID (US)
FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18507721 titled 'FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS
Simplified Explanation
The patent application describes systems and methods for a semiconductor device with a front-end-of-line structure, including a dielectric material, an interconnect structure, and a semiconductor memory array.
- The semiconductor device has a dielectric material on the front side of a semiconductor substrate, with an interconnect structure extending through it.
- The interconnect structure is electrically connected to a semiconductor memory array near the front side of the dielectric material.
- An insulating material encases at least a portion of the semiconductor memory array, with an opening created during back-end-of-line processing for electrical connection to the active contact surface at the backside of the interconnect structure.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, particularly in the development of memory modules and integrated circuits.
Problems Solved
1. Improved electrical connectivity in semiconductor devices. 2. Enhanced integration of memory arrays in semiconductor structures.
Benefits
1. Increased efficiency in semiconductor device performance. 2. Enhanced reliability and durability of semiconductor components.
Potential Commercial Applications
"Semiconductor Device with Front-End-of-Line Structure: Commercial Applications"
Possible Prior Art
There may be prior art related to semiconductor device structures with integrated memory arrays and interconnect structures, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology impact the overall size and form factor of semiconductor devices?
The abstract does not mention any details about the size or form factor implications of this technology.
Are there any specific materials or manufacturing processes required for implementing this innovation?
The abstract does not provide information on the materials or processes involved in the implementation of this technology.
Original Abstract Submitted
Systems and methods for a semiconductor device having a front-end-of-line structure are provided. The semiconductor device may include a dielectric material having a backside formed on a front side of a semiconductor substrate material and a front side, and an interconnect structure extending through the dielectric material. The interconnect structure may be electrically connected to a semiconductor memory array proximate the front side of the dielectric material. The semiconductor device may further have an insulating material encasing at least a portion of the semiconductor memory array and an opening created during back-end-of-line processing through which the active contact surface at the backside of the interconnect structure is exposed for electrical connection.
