18487879. MEMORY DEVICES INCLUDING CONTACT STRUCTURES AND RELATED ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)

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MEMORY DEVICES INCLUDING CONTACT STRUCTURES AND RELATED ELECTRONIC SYSTEMS

Organization Name

Micron Technology, Inc.

Inventor(s)

Fatma Arzum Simsek-ege of Boise ID (US)

MEMORY DEVICES INCLUDING CONTACT STRUCTURES AND RELATED ELECTRONIC SYSTEMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18487879 titled 'MEMORY DEVICES INCLUDING CONTACT STRUCTURES AND RELATED ELECTRONIC SYSTEMS

Simplified Explanation

The abstract describes a microelectronic device that consists of two structures: a first structure with memory arrays and a second structure with control logic devices. The first structure has memory cells, access devices, digit lines, and word lines. The second structure is in electrical communication with the memory cells. The device also includes contact structures that are individually in contact with the digit lines and in electrical communication with some of the control logic devices. One of the contact structures has a smaller cross-sectional area at the interface of the digit lines compared to the interface of the first and second structures.

  • The microelectronic device comprises two structures: one with memory arrays and the other with control logic devices.
  • The memory arrays contain memory cells with access devices and storage node devices.
  • Digit lines are connected to the access devices and extend in one direction to a digit line exit region.
  • Word lines are connected to the access devices and extend in another direction to a word line exit region.
  • The control logic devices are in electrical communication with the memory cells.
  • Contact structures are individually in contact with the digit lines and some of the control logic devices.
  • One of the contact structures has a smaller cross-sectional area at the interface of the digit lines compared to the interface of the first and second structures.

Potential applications of this technology:

  • Microelectronic devices with improved memory arrays and control logic devices.
  • Memory devices with enhanced performance and functionality.
  • Electronic systems with more efficient data storage and processing capabilities.

Problems solved by this technology:

  • Integration of memory arrays and control logic devices in a microelectronic device.
  • Efficient electrical communication between memory cells and control logic devices.
  • Optimization of contact structures for improved device performance.

Benefits of this technology:

  • Enhanced memory functionality and data processing capabilities.
  • Improved device performance and efficiency.
  • Increased integration and miniaturization of microelectronic devices.


Original Abstract Submitted

A microelectronic device comprises a first microelectronic device structure and a second microelectronic device structure attached to the first microelectronic device structure. The first microelectronic device structure comprises memory arrays comprising memory cells comprising access devices and storage node devices, digit lines coupled to the access devices and extending in a first direction to a digit line exit region, and word lines coupled to the access devices and extending in a second direction to a word line exit region. The second microelectronic device structure comprises control logic devices over and in electrical communication with the memory cells. The microelectronic device further comprises contact structures individually in contact with the digit lines in the digit line exit region and in electrical communication with at least some of the control logic devices, at least one of the contact structures comprising a first cross-sectional area at an interface of the first microelectronic device structure and the second microelectronic device structure, and a second cross-sectional area at an interface of one of digit lines, the second cross-sectional area smaller than the first cross-sectional area. Related microelectronic devices, memory devices, electronic systems, and methods are also described.

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