18478821. MICROELECTRONIC DEVICES, AND METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract (Micron Technology, Inc.)
Contents
MICROELECTRONIC DEVICES, AND METHODS OF FORMING MICROELECTRONIC DEVICES
Organization Name
Inventor(s)
Fatma Arzum Simsek-ege of Boise ID (US)
MICROELECTRONIC DEVICES, AND METHODS OF FORMING MICROELECTRONIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18478821 titled 'MICROELECTRONIC DEVICES, AND METHODS OF FORMING MICROELECTRONIC DEVICES
Simplified Explanation
The abstract describes a microelectronic device that includes a first control logic region, a memory array region, and a second control logic region. The memory array region contains capacitors, access devices, conductive lines, and conductive pillars. The second control logic region is vertically positioned above the memory array region.
- The microelectronic device includes a first control logic region, a memory array region, and a second control logic region.
- The memory array region contains capacitors, access devices, conductive lines, and conductive pillars.
- The second control logic region is vertically positioned above the memory array region.
Potential applications of this technology:
- Memory devices in electronic systems
- Microelectronic devices for data storage and processing
Problems solved by this technology:
- Efficient integration of control logic and memory array regions in a microelectronic device
- Improved communication between capacitors, access devices, and conductive lines
Benefits of this technology:
- Compact design with vertically stacked control logic and memory array regions
- Enhanced performance and functionality of microelectronic devices
- Increased data storage capacity and processing speed
Original Abstract Submitted
A microelectronic device comprises a first control logic region comprising first control logic devices and a memory array region vertically overlying the first control logic region. The memory array region comprises capacitors, access devices laterally neighboring and in electrical communication with the capacitors, conductive lines operatively associated with the access devices and extending in a lateral direction, and first conductive pillars operatively associated with the access devices and vertically extending through the memory array region. The microelectronic device further comprises a second control logic region comprising second control logic devices vertically overlying the memory array region. Related microelectronic devices, memory devices, electronic systems, and methods are also described.
