18462709. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR STORAGE DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor storage devices in terms of performance and efficiency?
- 1.11 What are the potential limitations or challenges in implementing this technology on a larger scale for commercial use?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Kazuki Akamine of Yokkaichi Mie (JP)
Shigeki Kobayashi of Kuwana Mie (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18462709 titled 'SEMICONDUCTOR STORAGE DEVICE
Simplified Explanation
The semiconductor storage device described in the patent application includes a stacked body with multiple electrically conductive layers separated by insulating layers, as well as a circuit section overlapping with the stacked body. The memory section of the stacked body contains memory cells, while the staircase section has stepped ends in the electrically conductive layers. The circuit section includes row decoders connected to the electrically conductive layers, with different structures in the staircase section having varying step gaps.
- Stacked body with multiple electrically conductive layers and insulating layers
- Circuit section overlapping with the stacked body
- Memory section with memory cells and staircase section with stepped ends
- Row decoders connected to electrically conductive layers
- Different structures in the staircase section with varying step gaps
Potential Applications
The technology described in the patent application could be applied in:
- Semiconductor storage devices
- Memory chips
- Data storage systems
Problems Solved
This technology addresses issues such as:
- Increasing memory capacity
- Improving data storage efficiency
- Enhancing semiconductor device performance
Benefits
The benefits of this technology include:
- Higher memory density
- Faster data access speeds
- Improved overall device functionality
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Data centers
- Cloud computing services
Possible Prior Art
One possible prior art for this technology could be the development of stacked memory structures in semiconductor devices to increase memory capacity and performance.
Unanswered Questions
How does this technology compare to existing semiconductor storage devices in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing semiconductor storage devices. Further research and testing would be needed to determine the specific advantages and disadvantages of this innovation.
What are the potential limitations or challenges in implementing this technology on a larger scale for commercial use?
The article does not address the potential limitations or challenges in scaling up this technology for commercial applications. Factors such as cost, manufacturing processes, and compatibility with existing systems could pose challenges that need to be explored further.
Original Abstract Submitted
A semiconductor storage device includes: a stacked body in which a plurality of electrically conductive layers is stacked with an insulating layer interposed in between; and a circuit section that is provided to overlap with the stacked body in a stack direction. The stacked body includes a memory section in which a plurality of memory cells is disposed and a staircase section in which the plurality of electrically conductive layers has stepped ends. The circuit section includes row decoders that are joined to the plurality of electrically conductive layers. The staircase section includes a first structure in which the row decoders are provided to overlap with each other in the stack direction and a second structure different from the first structure. The second structure has a greater step gap than a step gap of the first structure.
