18450509. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
Contents
- 1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18450509 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
Simplified Explanation
The manufacturing method described in the abstract involves forming grooves in a substrate, with sub-grooves arranged in a specific direction and sidewalls that are convex outwards. Word lines and source-drain layers are then formed within these grooves to create a semiconductor structure.
- Grooves are formed in a substrate with sub-grooves arranged in a specific direction.
- Sidewalls of the sub-grooves are convex outwards.
- Word lines and source-drain layers are formed within the grooves.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as memory chips and processors, where precise control over the structure is crucial for performance.
Problems Solved
This technology solves the problem of efficiently forming complex semiconductor structures with multiple sub-grooves and layers in a substrate, allowing for improved performance and functionality of the resulting devices.
Benefits
The benefits of this technology include enhanced performance, increased efficiency in manufacturing processes, and the potential for creating more advanced semiconductor devices with higher capabilities.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance memory chips, processors, and other semiconductor devices for various industries such as electronics, telecommunications, and computing.
Possible Prior Art
One possible prior art in this field could be the use of similar techniques for forming grooves and substructures in semiconductor devices, although the specific method described in the patent application may offer unique advantages in terms of performance and efficiency.
Unanswered Questions
How does this technology compare to existing methods for manufacturing semiconductor structures?
This article does not provide a direct comparison to existing methods for manufacturing semiconductor structures, leaving the reader to wonder about the specific advantages and disadvantages of this new approach.
What are the potential challenges or limitations of implementing this technology on a larger scale?
The article does not address the potential challenges or limitations of implementing this technology on a larger scale, leaving room for speculation on issues such as scalability, cost-effectiveness, and compatibility with existing manufacturing processes.
Original Abstract Submitted
A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The manufacturing method includes the following operations. A substrate is provided, and a first groove and a second groove are formed in the substrate, each of the first groove and the second groove having a depth in a first direction. The first groove includes multiple first sub-grooves arranged in the first direction, the second groove includes multiple second sub-grooves arranged in the first direction, and sidewalls of the first sub-grooves and sidewalls of the second sub-grooves are convex outwards. Word lines protruding away from the first groove each are formed at an interface of adjacent first sub-grooves. First source-drain layers formed on the sidewalls of the first sub-grooves, and second source-drain layers protruding away from the second groove each are formed at an interface of adjacent second sub-grooves.
