18387921. Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)

Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies

Organization Name

Micron Technology, Inc.

Inventor(s)

Kamal M. Karda of Boise ID (US)

Yi Fang Lee of Boise ID (US)

Haitao Liu of Boise ID (US)

Durai Vishak Nirmal Ramaswamy of Boise ID (US)

Ramanathan Gandhi of Boise ID (US)

Karthik Sarpatwari of Boise ID (US)

Scott E. Sills of Boise ID (US)

Sameer Chhajed of Boise ID (US)

Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract

This abstract first appeared for US patent application 18387921 titled 'Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies

Simplified Explanation

The patent application describes an integrated assembly with a first semiconductor material between two regions of a second semiconductor material, where hydrogen is diffused within both materials to increase the conductivity of the second semiconductor material. This creates a structure with the second semiconductor material as source/drain regions and the first semiconductor material as a channel region, with a transistor gate inducing an electric field within the channel region.

• Integrated assembly with two different semiconductor materials
• Hydrogen diffusion to increase conductivity of second semiconductor material
• Formation of source/drain regions and channel region for transistor
• Transistor gate inducing electric field within channel region

Potential Applications

• Semiconductor devices
• Transistors
• Integrated circuits

Problems Solved

• Enhancing conductivity of semiconductor materials
• Improving performance of transistors
• Creating more efficient integrated assemblies

Benefits

• Increased efficiency of semiconductor devices
• Enhanced performance of transistors
• Improved functionality of integrated circuits

Original Abstract Submitted

Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.