18371308. ENHANCED VALLEY TRACKING WITH TRIM SETTING UPDATES IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
Contents
- 1 ENHANCED VALLEY TRACKING WITH TRIM SETTING UPDATES IN A MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ENHANCED VALLEY TRACKING WITH TRIM SETTING UPDATES IN A MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ENHANCED VALLEY TRACKING WITH TRIM SETTING UPDATES IN A MEMORY DEVICE
Organization Name
Inventor(s)
Ching-Huang Lu of Fremont CA (US)
Yingda Dong of Los Altos CA (US)
ENHANCED VALLEY TRACKING WITH TRIM SETTING UPDATES IN A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18371308 titled 'ENHANCED VALLEY TRACKING WITH TRIM SETTING UPDATES IN A MEMORY DEVICE
Simplified Explanation
The abstract describes a patent application for control logic in a memory device that performs valley tracking calibration operations to optimize read operations on a memory array.
- The control logic receives a request to read data from a specific segment of the memory array.
- It conducts a coarse valley tracking calibration operation on the segment.
- Based on the result of the calibration operation, the control logic configures the read voltage level and parameters for the read operation.
- It then performs a fine valley tracking calibration operation on the segment using the configured read voltage level and parameters.
Potential Applications
This technology could be applied in various memory devices such as solid-state drives, flash drives, and other storage devices to improve read operations and enhance overall performance.
Problems Solved
1. Inefficient read operations in memory devices. 2. Lack of optimization in memory array access.
Benefits
1. Improved read performance. 2. Enhanced memory array access efficiency. 3. Better overall memory device performance.
Potential Commercial Applications
Optimized memory devices for consumer electronics, data centers, and other industries requiring high-performance storage solutions.
Possible Prior Art
One possible prior art could be the use of calibration operations in memory devices to improve read/write operations. However, the specific implementation of coarse and fine valley tracking calibration operations as described in this patent application may be unique.
Unanswered Questions
How does this technology compare to existing memory calibration techniques?
This article does not provide a direct comparison to existing memory calibration techniques.
What specific parameters are configured during the calibration operations?
The article does not detail the specific parameters that are configured during the calibration operations.
Original Abstract Submitted
Control logic in a memory device receives a request to perform a read operation to read data from a memory array of a memory device, the request comprising an indication of a segment of the memory array where the data is stored, and performs a first coarse valley tracking calibration operation on the segment of the memory array. The control logic further configures a read voltage level and one or more parameters associated with the read operation based on a result of the first coarse valley tracking calibration operation and performs a second fine valley tracking calibration operation on the segment of the memory array using the configured read voltage level and the configured one or more parameters.
