18366814. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)

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SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Yuan Fang of Heifei (CN)

Yanwu Wang of Heifei (CN)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18366814 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor structure described in the patent application includes a base, a chip stack on the base, and first conductive structures. The chip stack consists of chips stacked vertically on the base, with each chip having distinct sub-portions and surfaces. The first conductive structures involve conductive bumps and through-silicon vias that connect the chips within the stack.

  • Base, chip stack, and first conductive structures
 * The semiconductor structure comprises a base, a chip stack, and first conductive structures.
 * The chip stack is made up of chips stacked perpendicularly on the base.
 * Each chip has first and second sub-portions with flush and protruding surfaces.
 * The first conductive structures include conductive bumps and through-silicon vias connecting the chips.
    • Potential Applications:**

This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance processors, memory modules, and integrated circuits.

    • Problems Solved:**

This technology solves the challenge of efficiently connecting stacked chips within a semiconductor structure while maintaining electrical conductivity and structural integrity.

    • Benefits:**

The benefits of this technology include improved signal transmission, reduced power consumption, enhanced thermal management, and increased overall performance of semiconductor devices.

    • Potential Commercial Applications:**

The potential commercial applications of this technology could be in the fields of telecommunications, computing, automotive electronics, and consumer electronics.

    • Possible Prior Art:**

One possible prior art could be the use of traditional wire bonding or flip-chip technology to connect stacked chips in semiconductor structures.

    • Unanswered Questions:**
    • 1. How does this semiconductor structure impact the overall size and form factor of electronic devices utilizing this technology?**

This article does not address the specific impact of the semiconductor structure on the size and form factor of electronic devices. It would be interesting to explore how the compact design of the chip stack and conductive structures could potentially reduce the footprint of devices.

    • 2. Are there any limitations or challenges associated with the fabrication process of this semiconductor structure?**

The article does not delve into the potential limitations or challenges faced during the fabrication process of this semiconductor structure. It would be beneficial to investigate any hurdles in manufacturing, such as yield rates, material compatibility, or process complexity.


Original Abstract Submitted

A semiconductor structure includes a base, a chip stack located on the base, and first conductive structures. The chip stack includes chips stacked in sequence in a direction perpendicular to a plane of the base, a chip includes first and second sub-portions, a first surface of the first sub-portion is flush with that of the second sub-portion, a second surface of the first sub-portion protrudes from that of the second sub-portion, and the first and second surfaces are oppositely arranged. A first conductive structure includes a first conductive bump and a first through-silicon via, the first conductive bump is located between first sub-portions of two adjacent chips, the first through-silicon via penetrates through the first sub-portion in the direction perpendicular to the plane of the base and is connected to the first conductive bump, and the materials of the first conductive bump and the first through-silicon via are same.