18324084. MICROELECTRONIC DEVICES COMPRISING A BORON-CONTAINING MATERIAL, AND RELATED ELECTRONIC SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)

MICROELECTRONIC DEVICES COMPRISING A BORON-CONTAINING MATERIAL, AND RELATED ELECTRONIC SYSTEMS AND METHODS

Organization Name

Micron Technology, Inc.

Inventor(s)

Jordan D. Greenlee of Boise ID (US)

Everett A. Mcteer of Eagle ID (US)

Rita J. Klein of Boise ID (US)

John D. Hopkins of Meridian ID (US)

Nancy M. Lomeli of Boise ID (US)

Xiao Li of Boise ID (US)

Christopher R. Ritchie of Boise ID (US)

Alyssa N. Scarbrough of Boise ID (US)

Jiewei Chen of Meridian ID (US)

Sijia Yu of Singapore (SG)

Naiming Liu of Boise ID (US)

MICROELECTRONIC DEVICES COMPRISING A BORON-CONTAINING MATERIAL, AND RELATED ELECTRONIC SYSTEMS AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18324084 titled 'MICROELECTRONIC DEVICES COMPRISING A BORON-CONTAINING MATERIAL, AND RELATED ELECTRONIC SYSTEMS AND METHODS

Simplified Explanation

The patent application describes a microelectronic device that includes a stack structure, a memory pillar, and a boron-containing material. The stack structure consists of alternating conductive structures and dielectric structures. The memory pillar extends through the stack structure and creates memory cells where it intersects with the conductive structures. The boron-containing material is present on at least a portion of the conductive structures.

• The microelectronic device has a stack structure with alternating conductive and dielectric structures.
• A memory pillar is present, extending through the stack structure.
• Memory cells are formed at the intersections of the memory pillar and the conductive structures.
• The conductive structures of the stack structure are coated with a boron-containing material.

Potential applications of this technology:

• Memory devices in microelectronics
• Integrated circuits
• Semiconductor devices

Problems solved by this technology:

• Enhances the performance and functionality of memory devices
• Improves the reliability and durability of microelectronic devices

Benefits of this technology:

• Increased memory capacity and speed
• Improved data storage and retrieval
• Enhanced overall performance of microelectronic devices

Original Abstract Submitted

A microelectronic device comprises a stack structure, a memory pillar, and a boron-containing material. The stack structure comprises alternating conductive structures and dielectric structures. The memory pillar extends through the stack structure and defines memory cells at intersections of the memory pillar and the conductive structures. The boron-containing material is on at least a portion of the conductive structures of the stack structure. Related methods and electronic systems are also described.