18243344. DATA SENSING WITH ERROR CORRECTION simplified abstract (Micron Technology, Inc.)
Contents
- 1 DATA SENSING WITH ERROR CORRECTION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DATA SENSING WITH ERROR CORRECTION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Unanswered Questions
- 1.10 Original Abstract Submitted
DATA SENSING WITH ERROR CORRECTION
Organization Name
Inventor(s)
Mauro Castelli of Avezzano (IT)
Luigi Pilolli of L’Aquila (IT)
DATA SENSING WITH ERROR CORRECTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243344 titled 'DATA SENSING WITH ERROR CORRECTION
Simplified Explanation
In a patent application, multiple copies of data are retrieved from a subset of memory cells in an array of memory cells and stored in latch elements in a page buffer connected to the array. By enabling select lines for two or more latch elements, an output data is determined based on the sensing of the conducting line driven by these latch elements.
- Memory cells store multiple copies of data
- Data is sensed from a subset of memory cells
- Stored in latch elements in a page buffer
- Select lines enable two or more latch elements
- Output data determined based on sensing of conducting line
Potential Applications
This technology could be applied in:
- Data storage systems
- Memory devices
- High-speed data processing applications
Problems Solved
This technology helps in:
- Efficient data retrieval
- Reducing access time
- Enhancing data reliability
Benefits
The benefits of this technology include:
- Faster data processing
- Improved data redundancy
- Enhanced system performance
Potential Commercial Applications
- "Enhancing Data Storage Efficiency with Multiple Latch Elements Technology"
Unanswered Questions
How does this technology impact power consumption in memory devices?
This article does not address the potential effects of this technology on power usage in memory systems.
Are there any limitations to the number of latch elements that can be enabled simultaneously?
The article does not provide information on any constraints related to the number of latch elements that can be activated at once.
Original Abstract Submitted
Multiple copies of a stored data are sensed from a subset of memory cells of an array of memory cells into a plurality of latch elements in a page buffer coupled to the array of memory cells. Two or more latch elements are selected by enabling a respective select line of each of the two or more latch elements. An output data is determined based on a sensing of the conducting line driven by the two or more latch elements.
