18237934. METHODS AND APPARATUS FOR CONTROLLING ION FRACTION IN PHYSICAL VAPOR DEPOSITION PROCESSES simplified abstract (Applied Materials, Inc.)

METHODS AND APPARATUS FOR CONTROLLING ION FRACTION IN PHYSICAL VAPOR DEPOSITION PROCESSES

Organization Name

Applied Materials, Inc.

Inventor(s)

Xiaodong Wang of San Jose CA (US)

Joung Joo Lee of San Jose CA (US)

Fuhong Zhang of Cupertino CA (US)

Martin Lee Riker of Milpitas CA (US)

Keith A. Miller of Mountain View CA (US)

William Fruchterman of Santa Clara CA (US)

Rongjun Wang of Dublin CA (US)

Adolph Miller Allen of Oakland CA (US)

Shouyin Zhang of Livermore CA (US)

Xianmin Tang of San Jose CA (US)

METHODS AND APPARATUS FOR CONTROLLING ION FRACTION IN PHYSICAL VAPOR DEPOSITION PROCESSES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18237934 titled 'METHODS AND APPARATUS FOR CONTROLLING ION FRACTION IN PHYSICAL VAPOR DEPOSITION PROCESSES

Simplified Explanation

The patent application describes methods and apparatus for processing substrates. It specifically focuses on a process chamber used for processing a substrate. The chamber includes various components such as a body, a target to be sputtered, a substrate support, a collimator, and three magnets.

• The body of the chamber has an interior volume divided into a central portion and a peripheral portion.
• The substrate support is placed in the interior volume and has a surface that supports the substrate.
• The collimator is positioned between the target and the substrate support within the interior volume.
• The first magnet is located around the body near the collimator.
• The second magnet is positioned around the body above the support surface but below the collimator.
• The third magnet is placed around the body between the first and second magnets.
• The three magnets work together to generate magnetic fields that redistribute ions over the substrate.

Potential applications of this technology:

• Semiconductor manufacturing: This technology can be used in the production of semiconductor devices, where precise ion distribution is crucial for the performance of the devices.
• Thin film deposition: The technology can be applied in the deposition of thin films on substrates, ensuring uniformity and accuracy in the process.
• Solar cell production: Solar cells require precise ion distribution to optimize their efficiency, and this technology can help achieve that.

Problems solved by this technology:

• Uneven ion distribution: The technology addresses the issue of ions being distributed unevenly over the substrate during processing, which can lead to inconsistent results and reduced performance.
• Inefficient sputtering: By redistributing ions more effectively, the technology improves the efficiency of the sputtering process, reducing waste and improving overall productivity.

Benefits of this technology:

• Improved substrate processing: The technology ensures a more uniform distribution of ions over the substrate, resulting in improved processing and performance of the substrate.
• Increased efficiency: By optimizing ion distribution, the technology increases the efficiency of the sputtering process, reducing time and resources required for substrate processing.
• Enhanced product quality: The precise control of ion distribution provided by the technology leads to higher quality products with improved consistency and performance.

Original Abstract Submitted

Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.