18237225. SEMICONDUCTOR DEVICE WITH VOLUMETRICALLY-EXPANDED SIDE-CONNECTED INTERCONNECTS simplified abstract (Micron Technology, Inc.)
SEMICONDUCTOR DEVICE WITH VOLUMETRICALLY-EXPANDED SIDE-CONNECTED INTERCONNECTS
Organization Name
Inventor(s)
Kyle K. Kirby of Eagle ID (US)
SEMICONDUCTOR DEVICE WITH VOLUMETRICALLY-EXPANDED SIDE-CONNECTED INTERCONNECTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18237225 titled 'SEMICONDUCTOR DEVICE WITH VOLUMETRICALLY-EXPANDED SIDE-CONNECTED INTERCONNECTS
Simplified Explanation
The semiconductor device assembly described in the patent application includes two semiconductor dies with a layer of dielectric material and a reservoir of conductive material adjacent to openings in the dielectric layer. By aligning the openings in the two semiconductor dies, an interconnect opening is created when the reservoirs of conductive material are heated to expand and contact each other, forming an interconnect to electrically couple the semiconductor dies.
- Two semiconductor dies with dielectric material and conductive material reservoirs
- Aligned openings in the dies create an interconnect opening
- Heating the reservoirs causes them to expand and connect, forming an interconnect
- Electrically coupling the semiconductor dies
Potential Applications
- Semiconductor device manufacturing
- Integrated circuit assembly
- Microelectronics industry
Problems Solved
- Improving interconnect reliability
- Enhancing semiconductor device performance
- Facilitating compact device design
Benefits
- Enhanced electrical connectivity
- Increased device reliability
- Improved overall device performance
Original Abstract Submitted
A semiconductor device assembly is described that includes two semiconductor dies. The semiconductor dies each include a layer of dielectric material and a reservoir of conductive material located adjacent to openings in the layer of dielectric material. The opening at the layer of dielectric material of the first semiconductor die and the opening at the layer of dielectric material of the second semiconductor die are aligned to create an interconnect opening. The reservoirs of conductive material are heated to volumetrically expand the reservoirs of conductive material past one another such that they contact at respective non-horizontal surfaces to form an interconnect electrically coupling the semiconductor dies. In this way, a connected semiconductor device may be assembled.
