18236607. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Hyungeun Choi of Suwon-si (KR)

Kiseok Lee of Suwon-si (KR)

METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18236607 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Simplified Explanation

The method described in the patent application involves fabricating a semiconductor device by using a direct bonding method to create an internal contact region where a memory cell region overlaps with a core and/or peripheral region. This allows for signals and power to be transmitted between the memory cell region and the core and/or peripheral region, even when the additional contact region outside the memory cell region is smaller.

  • Internal contact region created by bonding memory cell region to core and/or peripheral region
  • Direct bonding method used for creating the contact region
  • Allows for transmission of signals and power between memory cell region and core and/or peripheral region
  • Enables smaller additional contact region outside memory cell region

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      1. Potential Applications
  • Semiconductor devices
  • Memory cells
  • Integrated circuits
      1. Problems Solved
  • Efficient transmission of signals and power between different regions of a semiconductor device
  • Space-saving design with smaller additional contact region
      1. Benefits
  • Improved connectivity within the semiconductor device
  • Enhanced performance and reliability
  • Space optimization for compact designs


Original Abstract Submitted

A method of fabricating a semiconductor device may use, as an internal contact region, a region in which a memory cell region overlaps a core and/or peripheral region by bonding at least a partial region of the memory cell region to at least a partial region of the core and/or peripheral region by a direct bonding method, and thus, even when an additional contact region is secured outside the memory cell region to be smaller, signals and/or power may be transmitted between the memory cell region and the core and/or peripheral region.