18234111. STRESS MITIGATION FOR THREE-DIMENSIONAL METAL CONTACTS simplified abstract (Micron Technology, Inc.)
STRESS MITIGATION FOR THREE-DIMENSIONAL METAL CONTACTS
Organization Name
Inventor(s)
Chandra S. Tiwari of Boise ID (US)
Jivaan Kishore Jhothiraman of Meridian ID (US)
Rutuparna Narulkar of Boise ID (US)
Nayan Chakravarty of Tualatin OR (US)
Pengyuan Zheng of Boise ID (US)
Hiroaki Iuchi of Boise ID (US)
STRESS MITIGATION FOR THREE-DIMENSIONAL METAL CONTACTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18234111 titled 'STRESS MITIGATION FOR THREE-DIMENSIONAL METAL CONTACTS
Simplified Explanation
The patent application describes an apparatus with a memory device structured with a three-dimensional array of memory cells and vertical metal contacts formed with reduced stress.
- Memory device with three-dimensional array of memory cells
- Vertical metal contacts extending through levels of the memory device
- Metal contacts formed with reduced stress
- Liner formed on walls of opening in dielectric
- Metal composition filled in opening next to liner
- Liner removed from walls of dielectric to reduce stress on metal composition
Potential Applications
- Semiconductor manufacturing
- Memory devices in electronic devices
- Data storage devices
Problems Solved
- Reducing stress on metal contacts
- Improving reliability of memory devices
- Enhancing performance of electronic devices
Benefits
- Increased longevity of memory devices
- Improved functionality of electronic devices
- Enhanced data storage capabilities
Original Abstract Submitted
A variety of applications can include apparatus having a memory device structured with a three-dimensional array of memory cells and one or more vertical metal contacts extending through levels of the memory device, where the one or more vertical metal contacts are formed with reduced stress. Each of the one or more vertical metal contacts can be constructed by forming a liner on walls of an opening in a dielectric, where the opening extends through the levels for the memory device, and forming a metal composition adjacent the liner and filling the opening with the metal composition. The liner can be removed from at least a portion of the walls of the dielectric, where the liner has a composition correlated to the metal composition such that removal of the liner reduces stress on the metal composition.
