18204077. FERROELECTRIC MEMORY ARCHITECTURE WITH GAP REGION simplified abstract (Micron Technology, Inc.)
FERROELECTRIC MEMORY ARCHITECTURE WITH GAP REGION
Organization Name
Inventor(s)
Giorgio Servalli of Fara Gera d'Adda (BG) (IT)
Marcello Mariani of Milano (IT)
FERROELECTRIC MEMORY ARCHITECTURE WITH GAP REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18204077 titled 'FERROELECTRIC MEMORY ARCHITECTURE WITH GAP REGION
Simplified Explanation
The patent application describes a ferroelectric memory architecture that includes a gap region between memory cells to reduce capacitance between plates and eliminate undesirable coupling during memory operations. The gap region contains a fluid, such as air, with a low dielectric constant to further reduce capacitance and improve memory device speed and resource consumption.
- Memory architecture includes a gap region between memory cells
- Gap region contains a fluid, such as air, with a low dielectric constant
- Low dielectric constant reduces capacitance between plates and eliminates undesirable coupling
- Implementation of the gap region improves memory device speed
- Implementation of the gap region reduces resource consumption associated with memory operations
Potential Applications
- Memory devices in electronic devices such as smartphones, tablets, and computers
- Data storage systems in servers and data centers
- Embedded memory in integrated circuits for various applications
Problems Solved
- Reduces capacitance between plates and eliminates undesirable coupling during memory operations
- Increases memory device speed
- Reduces resource consumption associated with memory operations
Benefits
- Improved performance and efficiency of memory devices
- Faster data access and retrieval
- Reduced power consumption
- Enhanced reliability and longevity of memory devices
Original Abstract Submitted
Methods, systems, and devices for a ferroelectric memory architecture are described. A memory architecture may include a gap region between memory cells to reduce a capacitance between plates coupled with the memory cells. The gap region may include a fluid, such as air, which may have a relatively low dielectric constant to reduce a capacitance between plates and reduce (e.g., eliminate) undesirable coupling between plates during memory operations. Implementing the gap region between memory cells enables a memory device to increase speed and reduce resource consumption associated with memory operations
