18199741. SEMICONDUCTOR DEVICE INTERCONNECTS FORMED THROUGH VOLUMETRIC EXPANSION simplified abstract (Micron Technology, Inc.)
SEMICONDUCTOR DEVICE INTERCONNECTS FORMED THROUGH VOLUMETRIC EXPANSION
Organization Name
Inventor(s)
Kyle K. Kirby of Eagle ID (US)
Terrence B. Mcdaniel of Boise ID (US)
SEMICONDUCTOR DEVICE INTERCONNECTS FORMED THROUGH VOLUMETRIC EXPANSION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18199741 titled 'SEMICONDUCTOR DEVICE INTERCONNECTS FORMED THROUGH VOLUMETRIC EXPANSION
Simplified Explanation
This document describes a technique for forming semiconductor device interconnects through volumetric expansion.
- A semiconductor assembly includes two semiconductor dies bonded at dielectric layers to create interconnect openings.
- The first die has a reservoir of conductive material next to the interconnect openings.
- The reservoir is heated to expand through the openings, forming interconnects between the dies.
Potential Applications
- Semiconductor manufacturing
- Electronic device assembly
Problems Solved
- Improving interconnect reliability
- Enhancing semiconductor device performance
Benefits
- Enhanced electrical coupling between semiconductor dies
- Increased reliability of semiconductor devices
- Improved overall performance of electronic devices
Original Abstract Submitted
This document discloses techniques, apparatuses, and systems for semiconductor device interconnects formed through volumetric expansion. A semiconductor assembly is described that includes two semiconductor dies. The first semiconductor die and the second semiconductor die are bonded at a dielectric layer of the first semiconductor die and a dielectric layer of the second semiconductor die to create one or more interconnect openings. The first semiconductor die includes a reservoir of conductive material located adjacent to the one or more interconnect openings and having a width greater than a width of the one or more interconnect openings. The reservoir of conductive material is heated to volumetrically expand the reservoir of conductive material through the one or more interconnect openings to form one or more interconnects electrically coupling the first semiconductor die and the second semiconductor die. In this way, a connected semiconductor device may be assembled.
