18172975. WAFER LEVEL PACKAGING PROCESS FOR THIN FILM INDUCTORS simplified abstract (QUALCOMM Incorporated)

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WAFER LEVEL PACKAGING PROCESS FOR THIN FILM INDUCTORS

Organization Name

QUALCOMM Incorporated

Inventor(s)

Anshih Tseng of Fremont CA (US)

Peng Zou of Camas WA (US)

WAFER LEVEL PACKAGING PROCESS FOR THIN FILM INDUCTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18172975 titled 'WAFER LEVEL PACKAGING PROCESS FOR THIN FILM INDUCTORS

Simplified Explanation

The abstract describes a method of forming an integrated circuit (IC) package, involving the following steps:

  • Forming a thin-film inductor (TFI) over a first dummy carrier wafer
  • Attaching an IC die to and over the TFI
  • Attaching a second dummy carrier wafer to and over the IC die
  • Removing the first dummy carrier wafer from the TFI
  • Attaching at least one solder bump to and under the TFI
  • Removing the second dummy carrier wafer from the IC die

Potential Applications:

  • Semiconductor industry for IC packaging
  • Electronics manufacturing for compact and efficient circuit integration

Problems Solved:

  • Facilitates the formation of IC packages with thin-film inductors
  • Enables the attachment of solder bumps for electrical connections

Benefits:

  • Improved efficiency in IC packaging
  • Enhanced circuit performance with integrated thin-film inductors


Original Abstract Submitted

An aspect relates to a method of forming an integrated circuit (IC) package, including: forming a thin-film inductor (TFI) over a first dummy carrier wafer; attaching an integrated circuit (IC) die to and over the TFI; attaching a second dummy carrier wafer to and over the IC die; removing the first dummy carrier wafer from the TFI; attaching at least one solder bump to and under the TFI; and removing the second dummy carrier wafer from the IC die. Another aspect relates to a method of forming an IC package, including forming a first redistribution layer (RDL) over a through-silicon via (TSV); forming a second RDL under the TSV; forming a thin-film inductor (TFI) over the first RDL; and attaching at least one integrated circuit (IC) die to the second RDL or the TFI.

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