18169167. MEMORY AND METHOD FOR OPERATING THE SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
Contents
- 1 MEMORY AND METHOD FOR OPERATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY AND METHOD FOR OPERATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MEMORY AND METHOD FOR OPERATING THE SAME
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
Kangling Ji of Hefei City (CN)
MEMORY AND METHOD FOR OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18169167 titled 'MEMORY AND METHOD FOR OPERATING THE SAME
Simplified Explanation
The abstract of the patent application describes a memory system that includes a storage cell array, a write driver, and a first column decoder. The first column selection line consists of a dummy route and a loaded route, where the dummy route is connected to the first column decoder and the loaded route, transmitting a first column selection signal to the loaded route. The loaded route is connected to a first storage cell area, transmitting the first column selection signal to the first storage cell area, selecting a storage cell column for a write operation. The transmission direction of the data signal to be written by the write driver is the same as the transmission direction of the first column selection signal transmitted via the loaded route.
- Memory system with storage cell array, write driver, and first column decoder
- First column selection line with dummy route and loaded route
- Loaded route transmits column selection signal to storage cell area
- Data signal transmission direction matches column selection signal transmission direction
Potential Applications
The technology described in this patent application could be applied in various memory systems, such as computer RAM, solid-state drives, and other data storage devices.
Problems Solved
This innovation helps in efficiently selecting storage cell columns for write operations in memory systems, improving overall performance and data writing speed.
Benefits
The benefits of this technology include faster write operations, improved data transfer efficiency, and enhanced memory system performance.
Potential Commercial Applications
The technology could be utilized in the development of faster and more efficient memory systems for consumer electronics, servers, data centers, and other computing devices.
Possible Prior Art
One possible prior art for this technology could be the use of column selection lines in memory systems to address write operations efficiently.
Unanswered Questions
How does this technology impact power consumption in memory systems?
The article does not provide information on how this technology affects power consumption in memory systems.
What are the potential challenges in implementing this technology on a large scale?
The article does not discuss the potential challenges that may arise in implementing this technology on a large scale.
Original Abstract Submitted
A memory includes: a storage cell array; a write driver; and a first column decoder, the first column selection line includes a dummy route and a loaded route, the dummy route is coupled to the first column decoder and the loaded route and transmits a first column selection signal to the loaded route; the loaded route is coupled to a first storage cell area and transmits the first column selection signal to the first storage cell area; the first column selection signal selects a storage cell column, on which a write operation is performed, from the first storage cell area. A transmission direction of a data signal to be written transmitted by the write driver is identical to a transmission direction of the first column selection signal transmitted via the loaded route.
