18168542. TRANSISTOR, SEMICONDUCTOR STRUCTURE, MEMORY, AND METHOD FOR FORMING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
Contents
- 1 TRANSISTOR, SEMICONDUCTOR STRUCTURE, MEMORY, AND METHOD FOR FORMING SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSISTOR, SEMICONDUCTOR STRUCTURE, MEMORY, AND METHOD FOR FORMING SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
TRANSISTOR, SEMICONDUCTOR STRUCTURE, MEMORY, AND METHOD FOR FORMING SAME
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
TRANSISTOR, SEMICONDUCTOR STRUCTURE, MEMORY, AND METHOD FOR FORMING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18168542 titled 'TRANSISTOR, SEMICONDUCTOR STRUCTURE, MEMORY, AND METHOD FOR FORMING SAME
Simplified Explanation
The patent application describes a transistor with a source structure, a trench, a drain structure, and a gate structure. The source and drain structures extend in opposite directions from the trench, with the gate structure surrounding the trench.
- The transistor includes a source structure, a trench, a drain structure, and a gate structure.
- The source structure extends in one direction from the trench, while the drain structure extends in the opposite direction.
- The gate structure surrounds the trench and is connected to the source and drain structures.
Potential Applications
This technology could be applied in various electronic devices such as amplifiers, switches, and memory storage.
Problems Solved
This innovation helps improve the efficiency and performance of transistors by optimizing the flow of current between the source and drain structures.
Benefits
The benefits of this technology include increased speed, reduced power consumption, and enhanced overall functionality of electronic devices.
Potential Commercial Applications
With its improved performance and efficiency, this technology could be valuable in the semiconductor industry for manufacturing advanced electronic components.
Possible Prior Art
One possible prior art for this technology could be the development of trench transistor structures in the field of semiconductor devices.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
This article does not provide a direct comparison with other transistor designs to evaluate its advantages over existing technologies.
What are the specific manufacturing processes involved in producing transistors with this structure?
The article does not delve into the detailed manufacturing processes required to implement this transistor design.
Original Abstract Submitted
A transistor includes a source structure, a trench, a drain structure, and a gate structure. The trench sequentially has first and second end faces which are arranged opposite in a first direction. The source structure extends from the first end face in a second direction. The source structure sequentially has third and fourth end faces which are arranged opposite in the first direction. The fourth end face is connected to the first end face. The drain structure extends from the second end face in a direction opposite to the second direction. The drain structure sequentially has fifth and sixth end faces which are arranged opposite in the first direction. The fifth end face is connected to the second end face. The second direction intersects the first direction. The gate structure surrounds the trench and is connected to the fourth and the fifth end face.
