18166492. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
Mingming Ma of Hefei City (CN)
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18166492 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The method described in the abstract involves manufacturing a semiconductor structure with a specific through hole design. Here are the key points of the innovation:
- Providing a substrate with a transistor structure
- Forming a laminated structure on the substrate with a dielectric layer and an insulating layer
- Creating a through hole to expose a source/drain of the transistor structure
- Etching the side wall of the through hole to form a conductive hole with a specific aperture size distribution
- Potential Applications:**
This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors or integrated circuits.
- Problems Solved:**
This method allows for precise and controlled formation of conductive holes in semiconductor structures, which can improve the performance and reliability of the devices.
- Benefits:**
The specific design of the conductive hole can help reduce parasitic capacitance and improve signal integrity in semiconductor devices.
- Potential Commercial Applications:**
This technology could be valuable for semiconductor manufacturers looking to enhance the performance of their products, especially in the fields of electronics, telecommunications, and computing.
- Possible Prior Art:**
Prior methods of forming conductive holes in semiconductor structures may not have the same level of control and precision as the method described in this patent application.
- Unanswered Questions:**
- 1. What specific materials are used in the dielectric and insulating layers of the laminated structure?**
The abstract does not provide details on the materials used, which could impact the performance and characteristics of the semiconductor structure.
- 2. How does the aperture size distribution of the conductive hole affect the overall functionality of the semiconductor device?**
While the abstract mentions the different aperture sizes at the ends and the medial part of the conductive hole, it does not elaborate on the implications of this design choice.
Original Abstract Submitted
A method for manufacturing a semiconductor structure includes: providing a substrate including a transistor structure; forming a laminated structure on the substrate, the laminated structure including a dielectric layer and an insulating layer which are sequentially stacked in a thickness direction of the substrate, and the insulating layer being arranged on a side, away from the substrate, of the dielectric layer; forming a through hole penetrating through the laminated structure in the laminated structure to expose a source/drain of the transistor structure; and etching at least part of a side wall of the through hole located in the dielectric layer to form a conductive hole in the insulating layer and the dielectric layer. An aperture size of a medial part of the conductive hole is greater than an aperture size of each of both ends of the conductive hole.
