18157059. MEMORY AND OPERATING METHOD THEREFOR simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)

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MEMORY AND OPERATING METHOD THEREFOR

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Kangling Ji of Hefei City (CN)

MEMORY AND OPERATING METHOD THEREFOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18157059 titled 'MEMORY AND OPERATING METHOD THEREFOR

Simplified Explanation

The abstract describes a memory system that includes a memory cell array, a first column decoder for write operations, a second column decoder for read operations, and a read amplifier located on one side of the memory cell array. The components are arranged in a specific direction for efficient operation.

  • Memory system components:
   - Memory cell array
   - First column decoder for write operations
   - Second column decoder for read operations
   - Read amplifier for receiving read data information
   - Components arranged in a specific direction for optimal performance
  • Read amplifier and decoders located on opposite sides of the memory cell array
  • Efficient organization of components for improved memory system functionality

Potential Applications

The technology described in the patent application could be applied in various fields such as:

  • Data storage systems
  • Computer memory modules
  • Embedded systems

Problems Solved

The memory system addresses several issues in memory technology, including:

  • Efficient read and write operations
  • Improved data retrieval speed
  • Enhanced memory system performance

Benefits

The benefits of this memory system technology include:

  • Faster data access
  • Enhanced memory system reliability
  • Improved overall system efficiency

Potential Commercial Applications

The memory system technology could be utilized in commercial applications such as:

  • High-speed computing systems
  • Data centers
  • Consumer electronics devices

Possible Prior Art

One possible prior art for this technology could be the development of memory systems with separate read amplifiers and decoders for optimized performance.

Unanswered Questions

How does this memory system compare to existing memory technologies in terms of speed and efficiency?

The article does not provide a direct comparison between this memory system and existing technologies in terms of speed and efficiency. Further research or testing may be needed to determine the performance advantages of this system.

What are the potential limitations or drawbacks of implementing this memory system in practical applications?

The article does not address any potential limitations or drawbacks of implementing this memory system in practical applications. Additional analysis or testing may be required to identify any challenges associated with the technology.


Original Abstract Submitted

A memory includes: a memory cell array; a first column decoder, coupled to the memory cell array and configured to perform a write operation on the memory cell array; a second column decoder, coupled to the memory cell array and configured to perform a read operation on the memory cell array; and a read amplifier, the read amplifier and the second column decoder being located on two opposite sides of the memory cell array, the read amplifier being coupled to the memory cell array and configured to receive read data information output by the memory cell array based on the read operation. The read amplifier, the first column decoder, the memory cell array and the second column decoder are arranged in a first direction, and the first column decoder and the second column decoder are located on two opposite sides of the memory cell array.