17948423. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)

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DRIFT COMPENSATION FOR CODEWORDS IN MEMORY

Organization Name

Micron Technology, Inc.

Inventor(s)

Marco Sforzin of Cernusco Sul Naviglio (IT)

Paolo Amato of Treviglio (IT)

Luca Barletta of Gallarate (IT)

Marco Pietro Ferrari of Milano (IT)

Antonino Favano of Brolo (IT)

DRIFT COMPENSATION FOR CODEWORDS IN MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17948423 titled 'DRIFT COMPENSATION FOR CODEWORDS IN MEMORY

Simplified Explanation

- Memory device with circuitry for drift compensation for codewords - Circuitry senses codeword in memory cells and determines cell metric values - Cell metric values based on threshold voltage values, mean of threshold voltage values, and value proportional to mean - Determines lowest cell metric value, inputs into Pearson detector, and determines originally programmed data of codeword

Potential Applications

- Data storage devices - Error correction in memory systems - Communication systems

Problems Solved

- Drift in memory cells affecting data integrity - Accurate retrieval of originally programmed data

Benefits

- Improved data reliability - Enhanced error correction capabilities - Extended lifespan of memory devices


Original Abstract Submitted

Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the memory cells. The circuitry is further configured to determine a value of a cell metric of each memory cell of the sensed codeword, wherein the value of the cell metric of each of the memory cells is determined based on a summation of a threshold voltage value of each of the memory cells, a mean of the threshold voltage values of the memory cells, and a value proportional to the mean of the threshold voltage values of the memory cells. The circuitry is further configured to determine which cell metric of each of the memory cells has a lowest value, input that cell metric into a Pearson detector, and determine the originally programmed data of the codeword using the Pearson detector.