17944343. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
Contents
Memory Circuitry And Method Used In Forming Memory Circuitry
Organization Name
Inventor(s)
Jivaan Kishore Jhothiraman of Meridian ID (US)
Chandra Tiwari of Boise ID (US)
Memory Circuitry And Method Used In Forming Memory Circuitry - A simplified explanation of the abstract
This abstract first appeared for US patent application 17944343 titled 'Memory Circuitry And Method Used In Forming Memory Circuitry
Simplified Explanation
The abstract describes a method for forming memory circuitry using a stack with alternating conductive and insulative tiers, extending into a stair-step region with a cavity in the shape of stairs. An insulating lining is formed in the cavity, with thicker insulation at the bottom. Conductive vias are formed through the insulative material and insulating lining, directly above the conducting material of the stairs.
- Memory circuitry formed using a stack with alternating conductive and insulative tiers
- Cavity in the shape of stairs in a stair-step region
- Insulating lining formed in the cavity, thicker at the bottom
- Conductive vias formed through insulative material and insulating lining, directly above conducting material of the stairs
- Potential Applications
- Memory circuitry in electronic devices
- Integrated circuits in computers and smartphones
- Problems Solved
- Efficient formation of memory circuitry
- Improved performance of memory arrays
- Benefits
- Enhanced memory circuitry construction
- Increased reliability and durability of memory arrays
Original Abstract Submitted
A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack extends from a memory-array region into a stair-step region. The stack in the stair-step region comprises a cavity comprising a flight of stairs in a vertical cross-section along a first direction. The first tiers are conductive and the second tiers are insulative in a finished-circuitry construction. An insulating lining is formed in the cavity atop treads of the stairs and laterally-over sidewalls of the cavity that are along the first direction. Individual of the treads comprise conducting material of one of the conductive tiers in the finished-circuitry construction. The insulating lining is thicker in a bottom part of the cavity than over the sidewalls of the cavity that are above the bottom part. Insulative material is formed in the cavity directly above the insulating lining. Conductive vias are formed through the insulative material and the insulating lining. Individual of the conductive vias are directly above and directly against the conducting material of the tread of individual of the stairs. Other embodiments, including structure, are disclosed.
