17940715. ACCESS CIRCUITRY STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
Contents
- 1 ACCESS CIRCUITRY STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ACCESS CIRCUITRY STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the technology impact power consumption in memory devices?
- 1.11 What are the potential challenges in scaling this technology for mass production?
- 1.12 Original Abstract Submitted
ACCESS CIRCUITRY STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAY
Organization Name
Inventor(s)
Collin Howder of Boise ID (US)
ACCESS CIRCUITRY STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17940715 titled 'ACCESS CIRCUITRY STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAY
Simplified Explanation
The patent application describes methods, systems, and devices for access circuitry structures for three-dimensional (3D) memory arrays. A memory device includes levels of memory cells over a substrate, with a conductive pillar extending through the levels of memory cells to support accessing memory cells at respective levels. The memory device also includes a bit line and a contact that couples the bit line with the conductive pillar, with the conductive pillar extending into a portion of the contact to reduce contact resistance.
- Memory device with levels of memory cells over a substrate
- Conductive pillar extending through levels of memory cells to support accessing memory cells at respective levels
- Bit line and contact coupling the bit line with the conductive pillar
- Conductive pillar extending into a portion of the contact to reduce contact resistance
Potential Applications
The technology described in the patent application could be applied in:
- High-density memory storage devices
- Data centers
- Mobile devices
Problems Solved
The technology addresses the following issues:
- Contact resistance between the conductive pillar and the bit line
- Efficient access to memory cells at different levels in 3D memory arrays
Benefits
The benefits of this technology include:
- Improved performance of memory devices
- Enhanced data access speed
- Increased memory storage capacity
Potential Commercial Applications
The technology could find commercial applications in:
- Semiconductor industry
- Memory chip manufacturing companies
- Electronics manufacturers
Possible Prior Art
One possible prior art for this technology could be the use of through-silicon vias (TSVs) in 3D memory arrays to connect memory cells at different levels.
Unanswered Questions
How does the technology impact power consumption in memory devices?
The patent application does not provide information on the impact of this technology on power consumption in memory devices. Further research is needed to understand the power efficiency of the described access circuitry structures.
What are the potential challenges in scaling this technology for mass production?
The patent application does not address the potential challenges in scaling this technology for mass production. It would be essential to investigate the scalability and manufacturing feasibility of the described access circuitry structures.
Original Abstract Submitted
Methods, systems, and devices for access circuitry structures for three-dimensional (3D) memory arrays are described. A memory device may include levels of memory cells over a substrate. To support accessing memory cells at respective levels, the memory device may include a conductive pillar extending through the levels of memory cells and coupled with one or more memory cells at respective levels of memory cells. The memory device may include a bit line and a contact that is configured to couple the bit line with the conductive pillar. The conductive pillar may be formed such that it extends into a portion of the contact, and a contact resistance between the conductive pillar and the bit line may be based on the conductive pillar extending into the portion of the contact.
