17937360. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
Contents
- 1 METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Collin Howder of Boise ID (US)
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17937360 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Simplified Explanation
The abstract describes a microelectronic device with a stack structure, staircase structure, liner material, conductive contact structures, and barrier structures.
- The stack structure consists of alternating conductive and insulative structures in tiers.
- The staircase structure has steps made of edges of some tiers of the stack structure.
- The first liner material is on the steps of the staircase structure, with a liner structure on top.
- The conductive contact structures extend through the first liner material and liner structure to the conductive structures of the stack structure.
- Barrier structures are between the conductive contact structures and the liner structure, spanning the same tiers as the liner structure.
Potential Applications
This technology could be applied in the development of advanced memory devices, electronic systems, and microelectronic devices.
Problems Solved
This innovation addresses the challenge of efficiently integrating conductive and insulative structures in a microelectronic device, improving performance and reliability.
Benefits
The use of the described structures can enhance the functionality and durability of microelectronic devices, leading to more efficient electronic systems.
Potential Commercial Applications
The technology could find applications in various industries, including semiconductor manufacturing, consumer electronics, and telecommunications.
Possible Prior Art
One possible prior art could be the use of similar stack structures in microelectronic devices, but the specific combination of features described in this patent application may be novel.
Unanswered Questions
How does this technology compare to existing solutions in terms of performance and cost?
This article does not provide a direct comparison with existing solutions in the market.
What are the specific materials used in the construction of the conductive and insulative structures?
The abstract does not detail the specific materials used in the construction of the structures mentioned.
Original Abstract Submitted
A microelectronic device comprises a stack structure, a staircase structure, a first liner material, a liner structure, conductive contact structures, and barrier structures. The stack structure comprises vertically alternating conductive structures and insulative structures arranged in tiers. Each of the tiers individually comprises one of the conductive structures and one of the insulative structures. The staircase structure has steps comprising edges of at least some of the tiers of the stack structure. The first liner material is on the steps of the staircase structure, and the liner structure on the first liner material. The conductive contact structures extend through the first liner material and the liner structure and to the conductive structures of the stack structure. The barrier structures are between the conductive contact structures and the liner structure vertically span substantially the same tiers of the stack structure as the liner structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.
