17934137. COUNTER MANAGEMENT FOR MEMORY SYSTEMS simplified abstract (Micron Technology, Inc.)

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COUNTER MANAGEMENT FOR MEMORY SYSTEMS

Organization Name

Micron Technology, Inc.

Inventor(s)

Yuan He of Boise ID (US)

COUNTER MANAGEMENT FOR MEMORY SYSTEMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17934137 titled 'COUNTER MANAGEMENT FOR MEMORY SYSTEMS

Simplified Explanation

The patent application describes methods, systems, and devices for counter management in memory systems. Here is a simplified explanation of the abstract:

  • Memory system includes circuitry to test localized counters by activating a row of memory cells multiple times and incrementing a test counter for each activation.
  • If the test count does not match an expected value, there may be an error associated with the subset of memory cells.
  • The circuitry can configure multiplexers to refrain from using the subset to store the counter value based on the flag.

Potential Applications

This technology could be applied in various industries such as computer hardware, data storage, and semiconductor manufacturing.

Problems Solved

1. Efficient testing of localized counters in memory systems. 2. Detection and management of errors in memory cells storing counter values.

Benefits

1. Improved reliability and accuracy in memory systems. 2. Enhanced performance through error detection and management. 3. Cost-effective maintenance of memory systems.

Potential Commercial Applications

Optimizing memory systems for data centers Enhancing performance in consumer electronics Improving reliability in automotive computing systems

Possible Prior Art

One potential prior art could be the use of built-in self-test (BIST) techniques in memory systems to detect and manage errors during testing.

=== What are the specific technical details of the circuitry used for testing memory cells in the memory system? The specific technical details of the circuitry, such as the design of the multiplexers and the test counter incrementation process, are not provided in the abstract.

=== How does the activation of a row of memory cells multiple times help in detecting errors in the memory system? The abstract mentions that the activation of a row of memory cells multiple times is used to increment a test counter associated with a subset of memory cells. However, it does not explain the specific mechanism by which this helps in detecting errors.


Original Abstract Submitted

Methods, systems, and devices for counter management for memory systems are described. A memory system may include circuitry configured to test localized counters of the memory system, where the circuitry may be configured to test a set of memory cells storing a value of the counter. During testing, the memory system may activate a row of memory cells a quantity of times, and the circuitry may increment a test counter associated with a subset of the set of memory cells for each activation to determine whether the subset is associated with an error. If a flag generated by the circuitry indicating a test count does not match an expected value, there may be an error associated with the subset. The circuitry may be operable to configure one or more multiplexers to refrain from using the subset to store the value of the counter based on the flag.