17931430. MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS simplified abstract (Micron Technology, Inc.)
Contents
- 1 MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Organization Name
Inventor(s)
Yoshikazu Moriwaki of Hiroshima (JP)
MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17931430 titled 'MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Simplified Explanation
The microelectronic device described in the patent application includes a base structure with active regions made of semiconductor material and isolation regions made of insulative material. The device also features a transistor structure with a channel within one of the active regions, a gate dielectric structure with a high-k material above the channel, and a gate electrode stack with a diffusion prevention material and a conductive material comprising lanthanum.
- Base structure with active regions and isolation regions
- Transistor structure with channel, gate dielectric structure, and gate electrode stack
Potential Applications
This technology could be used in various microelectronic devices such as integrated circuits, processors, and memory chips.
Problems Solved
This technology helps improve the performance and efficiency of microelectronic devices by enhancing transistor functionality and reducing leakage currents.
Benefits
The use of high-k materials and lanthanum in the gate electrode stack improves the overall performance and reliability of the device, leading to better energy efficiency and faster operation.
Potential Commercial Applications
This technology could be valuable in the semiconductor industry for manufacturing advanced microelectronic devices with higher performance and lower power consumption.
Possible Prior Art
One possible prior art could be the use of high-k materials in gate dielectric structures in microelectronic devices to improve transistor performance.
Unanswered Questions
How does this technology compare to existing transistor structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing transistor structures to evaluate the performance and efficiency improvements offered by the disclosed technology.
What are the specific manufacturing processes involved in implementing this technology in microelectronic devices?
The article does not delve into the detailed manufacturing processes required to incorporate this technology into practical microelectronic devices.
Original Abstract Submitted
A microelectronic device is disclosed, comprising a base structure comprising: active regions individually comprising semiconductor material; and isolation regions horizontally alternating with the active regions and individually comprising insulative material; a transistor structure comprising: a channel within one of the active regions of the base structure and horizontally interposed between two of the isolation regions; a gate dielectric structure including a high-k material above the channel; a gate electrode stack on the gate dielectric structure and comprising: diffusion prevention material on the gate dielectric structure and partially horizontally overlapping the channel, an opening in the diffusion prevention material horizontally centered about a horizontal centerline of the channel and having a smaller horizontal dimension than the channel; a conductive material comprising lanthanum on the diffusion prevention material and substantially filling the opening.
