17930656. MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
Contents
- 1 MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Jeffrey D. Runia of Boise ID (US)
Nancy M. Lomeli of Boise ID (US)
MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17930656 titled 'MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Simplified Explanation
The microelectronic device described in the patent application includes a stack structure with block and non-block regions, featuring stadium structures with staircase elements and insulative slot structures.
- The device includes a stack structure with block and non-block regions
- Blocks in the block region are separated by insulative slot structures
- Blocks in the block region consist of conductive and insulative material arranged in tiers
- Some blocks have stadium structures with staircase elements
- Non-block region neighbors the block region and includes additional stadium structures
- Stadium structures in the non-block region terminate at a higher vertical position than those in the block region
Potential Applications
The technology described in the patent application could be applied in:
- Memory devices
- Electronic systems
- Microelectronic devices
Problems Solved
This technology helps address issues related to:
- Increasing memory density
- Enhancing performance of electronic systems
- Improving the design and functionality of microelectronic devices
Benefits
The benefits of this technology include:
- Higher memory capacity
- Improved data processing speed
- Enhanced overall performance of electronic devices
Potential Commercial Applications
The technology described in the patent application could find commercial applications in:
- Semiconductor industry
- Consumer electronics market
- Information technology sector
Possible Prior Art
One possible prior art for this technology could be the use of insulative slot structures in microelectronic devices to separate conductive blocks.
Unanswered Questions
How does this technology impact power consumption in microelectronic devices?
The patent application does not provide information on the potential effects of this technology on power consumption in microelectronic devices.
What are the potential challenges in manufacturing microelectronic devices with this technology?
The patent application does not address the possible manufacturing challenges that could arise when implementing this technology in microelectronic devices.
Original Abstract Submitted
A microelectronic device includes a stack structure including a block region and a non-block region. The block region includes blocks separated from one another in a first horizontal direction by insulative slot structures and each including a vertically alternating sequence of conductive material and insulative material arranged in tiers. At least one of the blocks has stadium structures individually including staircase structures having steps comprising edges of some of the tiers. The non-block region neighbors the block region in the first horizontal direction. The non-block region includes additional stadium structures individually terminating at a relatively higher vertical position within the stack structure than at least one of the stadium structures at least partially within boundaries thereof in a second horizontal direction orthogonal to the first horizontal direction. Related memory devices, electronic systems, and methods are also described.
