17900064. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
Rita J. Klein of Boise ID (US)
Daniel Billingsley of Meridian ID (US)
Pengyuan Zheng of Boise ID (US)
Yongjun Jeff Hu of Boise ID (US)
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 17900064 titled 'Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Simplified Explanation
The patent application describes a memory array with memory blocks containing alternating insulative and conductive tiers, with channel-material strings passing through them. The conductor tier includes upper and lower conductor materials of different compositions, with a through-array-via (TAV) region containing TAVs made of the upper and lower conductor materials, along with a conducting material.
- Memory array with memory blocks containing alternating insulative and conductive tiers
- Channel-material strings passing through the insulative and conductive tiers
- Conductor tier with upper and lower conductor materials of different compositions
- Through-array-via (TAV) region with TAVs made of upper and lower conductor materials, along with a conducting material
- Potential Applications
- High-density memory storage devices - Semiconductor devices - Integrated circuits
- Problems Solved
- Increased memory storage capacity - Enhanced performance of memory arrays - Improved reliability of memory cells
- Benefits
- Higher data storage density - Faster data access speeds - Enhanced overall performance of memory arrays
Original Abstract Submitted
A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprising channel-material strings extend through the insulative tiers and the conductive tiers. The conductor tier comprises upper conductor material directly above and directly against lower conductor material of different composition from that of the upper conductor material. A through-array-via (TAV) region is included and comprises TAVs individually comprising the upper conductor material, the lower conductor material, and a conducting material that is directly below the conductor tier. The lower conductor material is directly against the conducting material and comprises at least one of (a) and (b), where, (a): a metal-rich refractory metal nitride; and (b): a stoichiometric or non-stoichiometric refractory metal nitride directly above and directly against one of (1), (2), or (3), where: (1): an elemental metal; (2): an alloy of at least two elemental metals; and (3): a metal-rich refractory metal nitride of different composition from that of the stoichiometric or non-stoichiometric refractory metal nitride. Methods are also disclosed.
