17899305. ROW ADDRESS LATCHING FOR MULTIPLE ACTIVATE COMMAND PROTOCOL simplified abstract (Micron Technology, Inc.)

From WikiPatents
Jump to navigation Jump to search

ROW ADDRESS LATCHING FOR MULTIPLE ACTIVATE COMMAND PROTOCOL

Organization Name

Micron Technology, Inc.

Inventor(s)

Kwang-Ho Cho of Boise ID (US)

Miki Matsumoto of Tokyo (JP)

ROW ADDRESS LATCHING FOR MULTIPLE ACTIVATE COMMAND PROTOCOL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17899305 titled 'ROW ADDRESS LATCHING FOR MULTIPLE ACTIVATE COMMAND PROTOCOL

Simplified Explanation

- Memory device receives first activate command indicating first set of bits of a row address - Memory device stores first set of bits to obtain first delayed signal of the first set of bits - Memory device receives second activate command indicating second set of bits of the row address - Memory device stores second set of bits to obtain first delayed signal of the second set of bits - Memory device stores first delayed signal of the first set of bits to obtain second delayed signal of the first set of bits - Memory device activates a page of memory addressed according to the second delayed signal and the first delayed signal of the second set of bits

Potential Applications

- Memory devices - Computer systems - Data storage systems

Problems Solved

- Efficient row address latching for multiple activate command protocol - Improved memory access speed - Enhanced memory management

Benefits

- Faster memory access - Improved memory performance - Enhanced data processing capabilities


Original Abstract Submitted

Methods, systems, and devices for row address latching for multiple activate command protocol are described. A memory device may receive a first activate command that indicates a first set of bits of a row address and may store the first set of bits to obtain a first delayed signal of the first set of bits. The memory device may receive a second activate command that indicates a second set of bits of the row address and may store the second set of bits to obtain a first delayed signal of the second set of bits. The memory device may store the first delayed signal of the first set of bits to obtain a second delayed signal of the first set of bits and may activate a page of memory addressed according to the second delayed signal and the first delayed signal of the second set of bits.